Recent peer-reviewed publications and invited reviews:
- J. Cao and J. Wu, Strain Effects in Low-Dimensional Transition Metal Oxides; invited review, submitted (2009)
- J. Cao, W. Fan, K. Chen, N. Tamura, M. Kunz and J. Wu, Constant threshold resistivity in the metal-insulator transition of VO2: evidence of Mott transition; submitted (2009)
- W. Fan, S. Huang, J. Cao, E. Ertekin, C. Barrett, D. R. Khanal, J. C. Grossman and J. Wu, Superelastic Metal-Insulator Phase Transition in Single-Crystal Vanadium Dioxide Nanobeams; submitted (2009)
- J. W. L. Yim, D. Chen, G. F. Brown and J. Wu, Synthesis and ex-situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios; Nano Research, in press (2009). (PDF)
- J.-H. Lee, J. Wu, and J. C. Grossman, Enhancing thermoelectric power factor with highly mismatched isoelectronic doping; submitted (2009)
- D. R. Khanal, W. Walukiewicz, J. Grandal, E. Calleja, and J. Wu, Determining surface Fermi level pinning position of InN nanowires using electrolyte gating; Appl. Phys. Lett., 95, 173114 (2009). (PDF)
- J. W. L. Yim, B. Xiang, and J. Wu, Sublimation of GeTe nanowires and evidence of its size effect studied by in situ TEM; J. Am. Chem. Soc., 131, 14526 (2009). (PDF)
- J. Cao*, W. Fan*, H. Zheng, and J. Wu, Thermoelectric Effect across the Metal-Insulator Domain Walls in VO2 Microbeams; Nano Lett. in press (2009). (PDF)
- J. Cao, E. Ertekin, V. Srinivasan, W. Fan, S. Huang, H. Zheng, J. W. L. Yim, D. R. Khanal, D. F. Ogletree, J. C. Grossman, and J. Wu, Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal VO2 beams; Nature Nanotech., 4, 732 (2009). (cover highlight) (PDF)
- G. F. Brown, J. W. Ager III, W. Walukiewicz and J. Wu, Finite Element Simulations of Compositionally Graded InGaN Solar Cells; Solar Energy Mater. & Solar Cells, in press (2009). (PDF)
- E. C. Garnett, Y. Tseng, D. R. Khanal, J. Wu, J. Bokor and P. Yang, Dopant Profiling and Surface Analysis of Silicon Nanowires Using Capacitance-Voltage Measurements, Nature Nanotech.; 4, 311 (2009). (PDF)
- J. Wu, When Group III - Nitrides Go Infrared: New Properties and Perspectives; invited review, J. Appl. Phys.; 106, 011101 (2009). (cover highlight) (PDF)
- G. F. Brown and J. Wu, Third Generation Photovoltaics; Laser and Photonics Reviews; 3, 394 (2009). (PDF)
- G. F. Brown, J. W. Ager, W. Walukiewicz, W. J. Schaff and J. Wu, Probing and Modulating Surface Electron Accumulation in InN by the Electrolyte Gated Hall Effect; Appl. Phys. Lett.; 93, 262105 (2008). (PDF)
- J. W. L. Yim and J. Wu, Optical Properties of InN and Related Alloys; Book Chapter, Indium Nitride and Related Alloys, Edited by T. D. Veal, C. F. McConville and W. J. Schaff, Taylor & Francis (2008).
- D. R. Khanal and J. Wu, Gate Coupling and Charge Distribution in Nanowire Field Effect Transistors; Nano Lett.; 7, 2778 (2007). (PDF)
- J. W. L. Yim, R. E. Jones, K. M. Yu, J. W. Ager III, W. Walukiewicz, W. J. Schaff and J. Wu, Effects of Surface States on Electrical Characteristics of InN and InGaN; Phys. Rev. B, Rapid Commun.; 76, 041303(R) (2007). (PDF)
- D. R. Khanal, Joanne W. L. Yim, W. Walukiewicz and J. Wu, Effects of Quantum Confinement on the Doping Limit of Semiconductor Nanowires; Nano Lett.; 7, 1186 (2007). (PDF)
- K. Alberi, J. Wu, W. Walukiewicz, K. M. Yu. O. D. Dubon, S. P. Watkins, C. X. Wang, X. Liu, Y. J. Cho and J. Furdyna; Valence-Band Anticrossing in Mismatched III-V Semiconductor Alloys; Phys. Rev. B; 75, 045203 (2007). (PDF)
Conference proceedings and posters:
We attend and present at MRS, APS, ACS, ICPS, and other conferences.
Patents:
W. Walukiewicz, K. M. Yu, J. Wu and W. J. Schaff, Broad Spectrum Solar Cells, US patent 7217882.
W. Walukiewicz, K. M. Yu and J. Wu, Multiband Semiconductors for High-Efficiency Solar Cells, US patent pending (2003).
Selected previous publications:
J. Wu, Q. Gu, B. S. Guiton, L. Ouyang, N. de Leon, H. Park;
Strain-induced Self Organization of Metal-Insulator Domains in
Single-Crystalline VO2 nanobeams; Nano Lett.; 6, 2313 (2006).(PDF)
Q. Gu, A. Falk, J. Wu, L. Ouyang and H. Park; Current-Driven Phase
Oscillation and Domain-Wall Propagation in WxV1-xO2 Nanobeams; Nano Lett.; 7, 363 (2007).(PDF)
D. Yu, J. Wu, Q. Gu and H. Park; Germanium Telluride Nanowires and
Nanohelices with Memory Switching Behavior; J. Am. Chem. Soc.; 128, 8148(2006).
J. Wu, W. Walukiewicz, W. Shan, et. al.; Structure-Dependent
Hydrostatic Deformation Potentials of Individual Single-Walled Carbon
Nanotubes; Phys. Rev. Lett.; 93, 017404 (2004).
J. Wu, W. Q. Han, W. Walukiewicz, et. al.; Raman Spectroscopy and
Time-resolved Photoluminescence of BN and BCN Nanotubes; Nano Lett.;
4, 647 (2004).
K. M. Yu, W. Walukiewicz, J. Wu, et. al.; Diluted II-VI Oxide
Semiconductors with Multiple Band Gaps; Phys. Rev. Lett., 91, 246403
(2003). Led to a Multiband Solar Cell patent.
J. Wu, W. Walukiewicz, K. M. Yu, et. al.; Superior Radiation
Resistance of In1-xGaxN Alloys: a Full-Solar-Spectrum Photovoltaic
Materials System; J. Appl. Phys., 94, 6477 (2003). Led to a Broad
Band Solar Cell patent.
H. T. Ng, B. Chen, J. Li, J. E. Han, M. Meyyappan, J. Wu, S. X. Li and E. E. Haller; Optical properties of single-crystalline ZnO nanowires on m-sapphire; Appl. Phys. Lett., 82, 2023 (2003).
J. Wu, W. Walukiewicz, E. E. Haller; Band structure of highly mismatched semiconductor alloys: Coherent potential approximation; Phys. Rev. B, 65,
233210 (2002).
J. Wu, W. Walukiewicz, K. M. Yu, et. al.; Effects of the Narrow
Bandgap on the Properties of InN; Phys. Rev. B, Rapid Commun., 66,
201403 (2002).
K. M. Yu, W. Walukiewicz, J. Wu, et. al.; Mutual Passivation of
Electrically Active and Isoelectronic Impurities: Si doped GaNxAs1-x;
Nature Mater., 1(3), 185 (2002).
J. Wu, W. Walukiewicz, H. Lu, W. Schaff, et. al.; Unusual Properties of the
Fundamental Bandgap of InN; Appl. Phys. Lett., 80, 3967 (2002).
Received 600+ citations.
J. Wu, W. Walukiewicz, H. Lu, W. Schaff, et. al.; Small Bandgap Bowing in InxGa1-xN Alloys; Appl. Phys. Lett., 90, 4741 (2002).
J. Wu and W. Walukiewicz; Band Gaps of InN and group III Nitride
Alloys; invited review, Superlatt. and Microstruct.; 34, 63(2003).
J. Wu, W. Shan and W. Walukiewicz; Band Anticrossing Effects in
Highly Mismatched Semiconductor Alloys; invited review, Semicond.
Sci. Tech., 17, 860 (2002).
W. Walukiewicz, W. Shan, J. Wu and K. M. Yu; Band Anticrossing in
III-N-V Alloys: Theory and Experiments; book chapter, Physics and
Applications of Dilute Nitrides, edited by I. A. Buyanova and W. M.
Chen, Taylor & Francis, New York, (2003).
