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4th Symposium On Non-Stoichiometric
III-V Compounds
Proceedings
The
proceedings of the symposium are published in the series "Physics
of Microstructered Semiconductors" published by the
University of Erlangen,
Germany.
Physik
Mikrostrukturierter Halbleiter, Vol. 27, Proc. of the 4th
Symposium on Non-Stoichiometric III-V Compounds, Asilomar,
Oct. 2002, eds.: P. Specht, T.R. Weatherford, P. Kiesel, S.
Malzer
(ISBN
3-932392-39-6)
Table
of content:
Preface
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5
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Dedication
E.R. Weber
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7
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Effects
on Stoichiometry on Point Defects and Impurities in Gallium
Nitride
C.G. Van de Walle, J.E. Northrup, J. Neugebauer
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11
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Increased
Interstitial As Concentration in GaAs Layers Grown at
Low Temperature on <111>A Misoriented GaAs (001)
Substrate
C. Schuer, T. Riedl, T. Marek, H.P. Strunk, S. Kunsagi-Mate
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19
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Nitrogen
Incorporation in GaAsN Grown at Low Temperature by Molecular
Beam Epitaxy
R. Zhao, J. Gebauer, P. Specht, H. Feick, E.R. Weber
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25
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A
Standard Low Temperature GaAs Growth: Prerequisite for
Defect Engineering
P. Specht, R. Zhao, J. Gebauer, E.R. Weber
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31
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Study
of Electron and Hole Emission of Deep Defect Centers in
Low Temperature Grown GaAs
C. Steen, M. Oechsner, V. Donchev, S. Malzer, G.H. Doehler,
P. Kiesel
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37
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Freestanding
LT-GaAs for Subpicosecond Photo-conductive Switch and
High-voltage Photomixer
M. Mikulics, F. Siebe, X. Zheng, R. Adam, M. Marso,
R. Sobolewski, R. Guesten, P. Kordos
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43
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Ultrafast
and Wideband Response of Optical Saturable Absorption
in LT-grown and Be-doped GaAs
T. Okuno, Y. Masumoto, S. Kadono, S. Kitade, H.
Bando, H. Okamoto
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49
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Highly
doped n-LT-GaAs layers
S. Malzer, F. Renner, C. Steen, G.H. Doehler
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55
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Highly
N-doped LT-GaAs and ErAs Recombination Layers Used in
NIPNIP THz Photomixers
F. Renner, A. Schwanhaeusser, M. Eckhardt, P. Pohl,
A. Friedrich, L. Robledo, S. Malzer, G.H. Doehler, P.
Kiesel, D. Driscoll, M. Hanson, A.C. Gossard
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59
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Experimental
Evidence of the Minority Carrier Extraction at the Bulk
Semi-Insulating GaAs/As-Implanted and LT MBE GaAs Interface
F. Dubecky, B. Zatko, P. Bohacek, V. Smatko, C. Ferrari,
A. Foerster, P. Kordos
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65
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Dopant-Induced
Non-Stoichiometry Effects in III-V Semiconductors: Diffusion
of Zinc into GaP and GaSb
W. Jaeger, Ch. Jaeger
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71
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Low
Frequency Noise Characterization of Point Defects in Semiconductors
M.J. Cich, S.Y. Tzeng, E.R. Weber
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79
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The
Role of Non-Stoichiometric III-V's in Radiation Hardened
Devices
T.R. Weatherford
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85
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Comparison
of Proton Irradiation Effects on the Luminescence Lifetime
of HVPE and MBE GaN
Q. Yang, H. Feick, R. Armitage, E.R. Weber
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93
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Nuclear
Radiation Damage in GaAs and GaN Thin Films, Quantum Wells
Infrared Photodetectors (QWIPs) and Quantum Well Light
Emitting Diodes (QW LDs)
S.M. Khanna
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99
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Self-Oriented
Growth of Gallium Nitride Films on
Amorphous Substrates
M.K. Sunkara
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105
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Defect
Structure of Thin GaN Epilayers: M-Plane versus C-Plane
Growth
A. Trampert, T.Y. Liu, K.H. Ploog
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111
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Influence
of Carbon Doping on the Optical and Electrical Properties
of MBE-GaN Grown on MOVPE-GaN/Sapphire Templates
R. Armitage, Q. Yang, H. Feick, S.Y. Tzeng, J. Gebauer,
E.R. Weber
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119
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Characteristics
of III-Nitride Films Grown by Electron Cyclotron Resonance
Plasma-Assisted Molecular-Beam Epitaxy and its Stoichiometric
Control under Plasma Growth Process
T. Yodo
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125
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Superconducting
Characteristics of InN Grown on Sapphire (0001)
T.
Inushima, T. Takenobu, M. Motokawa, K. Koide, A. Hashimoto,
A. Yamamoto, Y. Saito, T. Yamaguchi, Y. Nanishi
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131
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On
the Feasibility to Investigate Point Defects by Advanced
Electron Microscopy
C. Kisielowski, J.R. Jinschek
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137
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Scanning
Transmission Electron Microscopy: A Method for Quantitative
Analysis of Point and Extended Defects
I. Arslan, S. Ogut, P.D. Nellist, N.D. Browning
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145
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Defect
Formation via Thermal Decomposition in GaN
E.A. Stach, W.S. Wong, M. Kneissl, T. Sands
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151
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Comparison
of AlxGa1-xN Films Grown on Sapphire by MBE under N-rich
and Ga-rich Conditions
J. Jasinski, Z. Liliental-Weber, L. He, M.A. Reshchikov,
H. Morkoc
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157
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Photoconductivity
of Gallium Nitride Thin Layers
A. Castaldini, A. Cavallini, L. Polenta
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163
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Deep
Level Defects and Doping in High Aluminum Content AlGaN
S. Bradley, P. Smith, S. Goss, L. Brillson, W. Schaff
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169
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Non-Stoichiometry
Issues in III-Nitrides: An Industrial Perspective
K. Moore
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175
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Index |
181
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