General
Welcome to the webpage of the 4th Symposium on Non-Stoichiometric
III-V Compounds, to be held in Asilomar, California, October
2-4, 2002. The sympoisum is hosted by the IEEE,
Subsection Monterey Bay, California.
On this
webpage, useful informations about the symposium can be found.
A brief overview is given in our
flyer (pdf format). The site will be constantly updated
to give you current information.
Scope
The symposium provides a forum for the discussion of all
aspects of non-stoichiometric III-V compound semiconductor
fundamentals and applications. Covering theory as well as
industrial needs for different materials, the symposium intends
to be a platform for inter-disciplinary collaborations. Abstracts
for all III-V compounds and alloys may be submitted (e.g.
LT-GaAs).
This year,
special emphasis will be devoted to stoichiometry-related
effects in the III-nitrides from growth-related topics (choice
of substrate, change of density, dopant incorporation, yellow
luminescence…) to device performance issues (noise, current-collapse
failure, non-radiative recombination, charged interfaces…).
Topics
- Crystal
growth and structural properties
- Defect characterization
- Electrical and optical properties
- Device Applications
Todd R.
Weatherford
Non-Stoichiometry Symposium
Naval Postgraduate School
833 Dyer Road EC/WT
Monterey CA 93943-5121
USA
Phone:
+1 831 656 3044
Fax: +1 831 656 2760
e-mail:
nonstoi@uclink.berkeley.edu
