|
UNITS: 3
INSTRUCTOR: Professor J. Wu
CATALOG DESCRIPTION:
Review of electronic structure and band structure of semiconductors; intrinsic and extrinsic semiconductors; transport properties of semiconductors; semiconductor devices and their applications; defects in semiconductors; semiconductor characterization techniques: structural, electrical and optical techniques; Bulk semiconductor crystal growth : techniques, defects and properties; thin film growth : chemical and physical vapor processes; heteroepitaxy and defects; substrates and substrate engineering; device fabrication fundamentals: diffusion, ion implantation, metallization; lithography and etching. Recent advances in semiconductor nanostructures research will also be introduced
COURSE PREREQUISITES:
Upper Division standing in Engineering, Physics, Chemistry or Chemical Engineering; E45 or equivalent required. MSE 111 or Physics 7C preferred. |
Left image, isotopically-enriched 28Si single crystal being grown in a float-zone reactor. E. Haller and J. Ager, et al., Lawrence Berkeley National Laboratory. Right image, single-crystalline GaN nanowire array grown by catalyst-free molecular beam epitaxy; B. Schlager, et al., National Institute of Standards and Technology; Appl. Phys. Lett., 88, 213106 (2006). |
|
TEXTBOOK(S) AND/OR OTHER REQUIRED MATERIAL:
- S. Mahajan and K.S. Harsha, Principles of Growth and Processing of Semiconductors
- S.K. Ghandhi, VLSI Fabrication Principles, Si and GaAs, 2nd edition (Wiley 1994).
OTHER MAIN REFERENCES:
- Semiconductor Processing: J.W. Mayer, S.S. Lau, Electronic Materials Science for Integrated Circuits in Si and GaAs(Macmillan 1990).
- S.A. Campbell, The Science and Engineering of Microelectronic Fabrication,(Oxford University Press 1996).
- F. Shimura, Semiconductor Silicon Crystal Technology (Academic Press 1989).
- R.C. Jaeger, Introduction to microelectronic fabrication (Addison-Wesley 1988).
- D. Colliver, Compound Semiconductor Technology, Artech House 1976).
- S.M. Sze, VLSI Technology, 2nd Ed. (McGraw Hill 1988), Semiconductor Device Physics: S.M. Sze, Physics of Semiconductor Devices, 2nd Ed. (J. Wiley 1981)
- A.S. Grove, Physics and Technology of Semiconductor Devices (J. Wiley 1967).
Specific references to individual chapters are given in the class and in hand-outs
All reference books will be in the Engineering library on reserve
COURSE OBJECTIVES:
- Provide an introduction into the operating principles of electronic and optical devices, the principles of semiconductor processing.
- Present the relevant materials science issues in semiconductor processing.
- Prepare students a) for work in semiconductor processing facilities and b) for graduate studies related to semiconductor processing and materials science topics.
OUTCOMES:
The successful student will learn:
- Understanding of the concept of bandgap in semiconductors, to distinguish direct and indirect
bandgap semiconductors, and to relate the bandgap with the wavelength of optical absorption
and emission.
- Understanding of free electron and hole doping of semiconductors to determine Fermi level
position and calculate the free carrier concentrations at variable temperatures.
-
Knowledge of the formation of p-n junction to explain the diode operation and draw its I-V
characteristics.
-
Basic understanding of quantum confinement in semiconductor nanostructures to explain and
calculate the bandgap shift with size reduction.
-
Understanding of the operation mechanism of solar cells, LEDs, lasers and FETs, so that can
draw the band diagram to explain their I-V characteristics and functionalities.
-
Ability to describe major growth techniques of bulk, thin film, and nanostructured
semiconductors.
-
Understanding of the effect of defects in semiconductors, so that can describe their electronic
and optical behaviors, and the methods to eliminate and control them in semiconductors.
-
Basic knowledge of doping, purification, oxidation, gettering, diffusion, implantation,
metallization, lithography and etching in semiconductor processing.
-
Understanding of the mechanisms of Hall Effect, transport, and C-V measurements, so that
can calculate carrier concentration, mobility and conductivity given raw experimental data.
-
Basic knowledge of x-ray diffraction, SEM and TEM, EDX, Auger, STM and AFM, how
they work and what sample information they provide.
-
Basic knowledge of photoluminescence, absorption and Raman scattering, can describe
their mechanism and draw their spectrum.
-
Basic knowledge of Rutherford Back Scattering and SIMS, how they work and when
they are needed.
TOPICS COVERED:
Introduction to Semiconductor Physics, Crystal Bonding, Energy Band Structure of Solids, Intrinsic and Extrinsic Semiconductors, Carrier Transport and Recombination in Semiconductors, Properties of Semiconductor Nanostructures, Semiconductor Junctions, Solar Cells, LEDs, Lasers, Bipolar Transistors, FETs, Defects in Semiconductors, Structural, Analytical, Electrical , and Optical Characterization, Growth of Bulk Crystals, Dislocations, Doping in the Melt, Microdefects in Si, Fundamentals of Thin Film Growth, LPE, VPE, OMVPE (MOCVD), MBE, Growth of Nanostructures, Heteroepitaxy, SOI, Strained Si, Oxidation and Gettering in Si, Diffusion, Ion Implantation, Metallization, Lithography and Etching
COURSE FORMAT:
Three hours of lecture and one hour of discussion per week
CONTRIBUTION OF THE COURSE TO MEETING THE PROFESSIONAL COMPONENT:
The course provides a thorough fundamental understanding of semiconductor processing techniques and materials issues related to semiconductor processing and device failure. Many students from different departments who took the course in the past went on to positions in the semiconductor industry and reported back that the course had provided them with a good background for their work.
RELATIONSHIP OF THE COURSE TO UNDERGRADUATE DEGREE PROGRAM OBJECTIVES:
This course is a core course in our electronic materials emphasis of the MSE undergraduate education
ASSESSMENT OF STUDENT PROGRESS TOWARD COURSE OBJECTIVES:
Students prepare 5 sets of homework and a term paper; they have to pass one midterm exam and one final exam.
|
