|
Date
|
Room
|
Speaker
|
Topic
|
|
25-Jan
|
62-203
|
NA
|
Organization of spring seminar
|
|
1-Feb
|
66-316
|
William Hong
|
"Effect of Buffer Layers and AlN Interlayers on GaN Heterostructure
Characteristics"
|
|
8-Feb
|
62-255
or NCEM
|
Erdmann Spieker
|
"A Novel TEM Method for Large-Area Analysis
of Misfit-Dislocation
Networks in Semiconductor Heterostructures"
|
|
15-Feb
|
66-316
|
Peng Zhang
|
"Analysis of nano-scale
stress in strained silicon materials and microelectronics devices
by energy-filtered convergent beam electron
diffraction"
|
|
22-Feb
|
66-316
|
Matthew Pickett
|
"Developments on internal gettering for
multicrystalline silicon"
|
|
1-Mar
|
62-203
|
Johnny Ho
|
"How does group III-N epilayer
quality change with varied RF plasma conditions?"
|
|
8-Mar
|
66-316
|
Karin Brueckner
|
"Defects in LT-GaAs:
Annealing and photo-luminescence"
|
|
15-Mar
|
66-316
|
Til Bartel
|
"Spinodal
decomposition in InGaN layers"
|
|
22-Mar
|
62-255
|
Alissa Johnson
|
"An investigation of metal precipitates in
N- and P- type Silicon"
|
|
29-Mar
|
|
NA
|
spring break
|
|
5-Apr
|
66-316
|
Swanee Shin
|
"Formation and homogeneity of InN quantum wells and
quantum dots"
|
|
12-Apr
|
66-316
|
Joanne Yim
|
"The dielectric function in
III-nitrides"
|
|
19-Apr
|
66-316
|
Devesh Khanal
|
"Effects on String-Ribbon Silicon of Oxygen
and Carbon-Rich Gas Addition During Growth"
|
|
26-Apr
|
66-316
|
Derrick Speaks
|
"Defect Analysis of InAlGaN"
|
|
3-May
|
66-316
|
Matthias Heuer
|
"In-situ TEM on metal-rich clusters in
silicon"
|
|
10-May
|
66-316
|
Andrei Istratov
|
TBA
|
|
17-May
|
66-316
|
Petra Specht
|
"Nitride based devices: Reliability and
other future challenges"
|
