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GaAs Research of the Webergroup


Our group has a long standing tradition of research in GaAs, with a main focus on defect characterization and growth. One of the main topics has been growth and characterization of non-stoichiometric GaAs layers (so called low temperature grown GaAs).

Current research:
- molecular beam epitaxial (MBE) growth and characterization of nonstoichiometric GaAs, especially influence of doping
- growth and characterization of InGaAsN
- stoichiometry related defects in compound semiconductors
- Oxidation of AlAs

Recent publications

"In situ diffuse reflectance spectroscopy investigation of low-temperature-grown GaAs"
Ri-an Zhao, Michael J. Cich, Petra Specht, and Eicke R. Weber
Appl. Phys. Lett. 80, 2060 (2002). online

"Influence of gas transport on the oxidation rate of aluminum arsenide"

Cich, M.J.: Zhao, R.; Anderson, E.H.; Weber, E.R.
J. Appl. Phys. 91, 121 (2002). online

"Does Beryllium doping suppress the formation of Ga-vacancies in nonstoichiometric GaAs layers grown at low temperatures?"
J. Gebauer, R. Zhao, P.Specht, E.R.Weber, F. Redmann, F. Börner, R. Krause-Rehberg, Appl. Phys. Lett. 79, 4313 (2001).

“MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source”
A.E. Zhukov, R. Zhao, P. Specht, V.M. Ustinov, A. Anders, E.R. Weber, Semicond. Sci. Technol. 16, 413 (2001)

last revised 06/19/02





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