GaAs Research of the Webergroup
General
Our group has a long standing tradition of research in GaAs,
with a main focus on defect characterization and growth. One
of the main topics has been growth
and characterization of non-stoichiometric GaAs layers (so called
low temperature grown GaAs).
Current
research:
- molecular beam epitaxial (MBE) growth
and characterization of nonstoichiometric GaAs, especially influence
of doping
- growth and characterization of InGaAsN
- stoichiometry related defects in compound semiconductors
- Oxidation of AlAs
Recent
publications
"In
situ diffuse reflectance spectroscopy investigation of low-temperature-grown
GaAs"
Ri-an Zhao, Michael J. Cich, Petra Specht, and Eicke R.
Weber
Appl. Phys. Lett. 80, 2060 (2002). online
"Influence of gas transport on the oxidation rate of aluminum
arsenide"
Cich, M.J.: Zhao, R.; Anderson, E.H.; Weber, E.R.
J. Appl. Phys. 91, 121 (2002). online
"Does Beryllium
doping suppress the formation of Ga-vacancies in nonstoichiometric
GaAs layers grown at low temperatures?"
J. Gebauer, R. Zhao, P.Specht, E.R.Weber, F. Redmann, F.
Börner, R. Krause-Rehberg, Appl. Phys. Lett. 79, 4313 (2001).
online
“MBE growth
of (In)GaAsN on GaAs using a constricted DC plasma source”
A.E. Zhukov, R. Zhao, P. Specht, V.M. Ustinov, A. Anders, E.R.
Weber, Semicond. Sci. Technol. 16, 413 (2001)
online
