Publications - Wide bandgap semiconductor

Webergroup - Wide bandgap semiconductor publications

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Webergroup publications - WIDE BANDGAP SEMICONDUCTORS (1996 - present)

Journal Paper and Conference Proceedings

2005

Band transitions in wurtzite GaN and InN determined by valence electron loss spectroscopy
P. Specht, J.C. Ho, X. Xu, R. Armitage, E.R. Weber, R. Erni, C. Kisielowski,
Solid State Communications 135 (2005) 340-344

2004

Evaluation of CCl4 and CS2 as carbon doping sources in MBE growth of GaN
R. Armitage, Q. Yang, H. Feick, and E.R. Weber
J. Cryst. Growth, 263 (no.1-4), pp. 132-142 (2004) online

Recombination Related to Two-Dimensional Electron Gas of AlxGa1-xN/GaN Single Heterostructures Studied with Picosecond Time-Resolved Photoluminescence
Q. Yang, R. Armitage, E.R. Weber, R. Birkhahn, D. Gotthold, S. Guo, and B. Albert
MRS Symp. Proc. 798, Y10.47 (2004).

2003

"Contributions from gallium vacancies and carbon-related defects to the "yellow luminescence" in GaN"
R. Armitage, William Hong, Qing Yang, H. Feick, J. Gebauer, E. R. Weber, S. Hautakangas and K. Saarinen
Appl. Phys. Lett. 82, 3457 (2003) online

Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN
Qing Yang, H. Feick, E.R. Weber
Appl. Phys. Lett. 82, 3002 (2003). online

2002

Lattice-matched HfN buffer layers for epitaxy of GaN on Si
R. Armitage, Qing Yang, H. Feick, J. Gebauer, E.R. Weber, Satoko Shinkai, Katsutaka Sasaki
Appl. Phys. Lett. 81, 1450 (2002). online
: Luminescence energy and carrier lifetime as a function of applied biaxial strain in InGaN/GaN quantum-well structures
N. Shapiro, H. Feick, W. Hong, N.F. Gardner, W.K. Goetz, J.W. Yang, E.R. Weber
Proceedings of the MRS 2002 spring meeting, San Francisco, CA, USA, 2-5 April 2002.
: Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl₄ Dopant Source
R. Armitage, Q. Yang, H. Feick, Y. Park, E.R. Weber
Proceedings of the MRS 2002 spring meeting, San Francisco, CA, USA, 2-5 April 2002.

2001

Fast Proton Damage Effects on the Luminescence Properties of High-Quality GaN
Q. Yang, H. Feick, R. Armitage, E.R. Weber
Proceedings MRS 2001 fall meeting, Boston, MA, USA, 26-30 November 2001.

Relation between Structural Parameters and the Effective Electron-Hole Separation in InGaN/GaN Quantum Wells
N. A. Shapiro, H. Feick, N. F. Gardner, W. K. Gotz, P. Waltereit, J. S. Speck, and E. R. Weber
phys. stat. Sol. (b) 228, 147 (2001) ONLINE; Room-Temperature Ultraviolet Nanowire Nanolasers
M.H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang
Science 292, 1897 (2001). ONLINE; High resolution x-ray diffraction strain-stress analysis of GaN/Sapphire heterostructures
V. Harutyunyan, A.P. Aivazyan, E.R. Weber, Y. Kim, Y. Park and S.G. Subramanya
J. Physics D: Appl. Phys. 34, A35 (2001). ONLINE; Compression of the DC drain current by electron trapping in AlGaN/GaN modulation-doped field-effect transistors
S. Nozaki, H. Feick, E.R. Weber, M. Micovic, C. Nguyen
Appl. Phys. Lett. 78, 2896 (2001). ONLINE; Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth
Y. Kim, N.A. Shapiro, H. Feick, R. Armitage, E.R. Weber
Appl. Phys. Lett. 78, 895 (2001). ONLINE; see also report LBNL-47267.; Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport
M.H. Huang, Y. Wu, H. Feick, N. Tran, E. Weber, and P. Yang
Adv. Mater. 13, No. 2, 113 (2001). ONLINE
2000

A method to pattern Pd over-layers on GdMg films and its application to increase the transmittance of metal hydride optical switches
R. Armitage, M. Cich, M. Rubin, and E.R. Weber
Applied Physics A (Materials Science Processing), A71, 647-50 (2000).
: Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
N.A. Shapiro, Y. Kim, H. Feick, E.R. Weber, P. Perlin, J.W. Yang, I. Akasaki, and H. Amano
Phys. Rev. B. 62, R16318 (2000). ONLINE; GaN thin films by growth on Ga-rich GaN buffer layers
Y. Kim, Sudhir G. S., H. Siegle, J. Krüger, P. Perlin, E.R. Weber, S. Ruvimov and Z. Liliental-Weber
J. Appl. Phys. 88, 6032 (2000). ONLINE; Interband optical absorption in free standing layer of Ga_0.96In_0.04As_0.99N_0.01
P. Perlin, P. Wisniewski, C. Skierbiszewski, T. Suski, E. Kaminska, Sudhir G.S., E.R. Weber, D.E. Mars, and W. Walukiewicz
Appl. Phys. Lett. 76, 1279 (2000). ONLINE; Transition thickness of semiconductor heteroepitaxy
A. Sasaki, E. R. Weber, Z. Liliental-Weber, S. Ruvimov, J. Washburn, and Y. Nabetani
Thin Solid Films 367, 277 (2000). ONLINE; The Red (1.8 eV) Luminescence in Epitaxial Grown GaN
D.M.Hofmann, B.K. Meyer, H. Alves, F. Leiter, W. Burkhard, N. Romanov, Y. Kim, J. Krüger, E.R. Weber
phys. stat. sol. (a) 180, 261 (2000). ONLINE; Improved Heteroepitaxial MBE GaN Growth with a Ga Metal Buffer Layer
Y. Kim, Sudhir G.S., J. Krüger, H Siegle, N.A. Shapiro, R. Armitage, H. Feick, E.R. Weber, C. Kisielowski, Y. Yang
Mat. Res. Soc. Symp. Vol. 622, T4.10 (2000). ONLINE; see also report LBNL-45958.; The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1-xN quantum wells
N.A. Shapiro, P. Perlin, C. Kisielowski, L.S. Mattos, J.W. Yang, and E.R. Weber
MRS Internet J. Nitride Semicond. Res. 5,1 (2000). ONLINE

1999: Selective excitation of the yellow luminescence of GaN
J.S. Colton, P.Y. Yu, K.L. Teo, P. Perlin, E.R. Weber, I. Grzegory, K. Uchida
Physica B 273-274, 75 (1999). ONLINE; The influence of the sapphire substrate on the temperature dependence of the Gallium Nitride band gap
J. Krüger, N.A. Shapiro, Sudhir G.S., Y. Kim, H, Siegle, P. Perlin, E.R. Weber, W.S. Wong, T. Sands, N.W. Cheung, R.J. Molnar
Mat. Res. Soc. Symp. Vol. 572, 289 (1999).; Effect of N/Ga flux ratio in GaN buffer layer growth by MBE on (0001) sapphire on defect formation in the GaN main layer
S. Ruvimov, Z. Lilienthal-Weber, J. Washburn, Y. Kim, Sudhir G.S., J. Krüger, E.R. Weber
Mat. Res. Soc. Symp. Vol. 572, 295 (1999).; High-quality GaN grown by molecular beam epitxay on Ge(001)
H. Siegle, Y. Kim, Sudhir G.S., J. Krüger, P. Perlin. J. Ager III, C. Kisielowski, E.R. Weber
Mat. Res. Soc. Symp. Vol. 572, 451 (1999).; Growth of 1.3 µm InGaAsN laser material on GaAs by molecular beam epitaxy
D. E. Mars, D. I. Babic, Y. Kaneko, Chang Ying-Lan, S. Subramanya, J. Kruger, P. Perlin, and E. R. Weber
J. Vac. Sci. Technol. B 17, 1272 (1999). ONLINE; Selective excitation and thermal quenching of the yellow luminescence of GaN
J.S. Colton, P.Y. Yu, K.L. Teo, E.R. Weber, P. Perlin, I. Grzegory, K. Uchida
Appl. Phys. Lett. 75, 3273 (1999). ONLINE; Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off
W.S. Wong, Y. Cho, E.R. Weber, T. Sands, K.M. Yu, J. Krüger, A.B. Wengrow, N.W. Cheung
Appl. Phys. Lett. 75, 1887 (1999). ONLINE; Transverse effective charge and its pressure dependence in GaN single crystals
P. Perlin, T. Suski, J.W. Ager III, G. Conti, A. Polian, N.E. Christensen, I. Gorczyca, I. Grzegory, E.R. Weber, E.E. Haller
Phys. Rev. B 60, 1480 (1999). ONLINE; Chemical and structural transformation of sapphrie (Al₂O₃) surface by plasma source nitridation
Y.Cho, Y. Kim, E.R. Weber, S. Ruvimov, Z. Liliental-Weber
J. Appl. Phys. 85, 7909 (1999). ONLINE; Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate
P. Perlin, L. Mattos, N.A. Shapiro, J. Krüger, W.S. Wong, T. Sands, N.W. Cheung, E.R. Weber
J. Appl. Phys. 85, 2385 (1999). ONLINE

1998: Selective UV laser processing for lift-off of GaN thin films from sapphire substrates
W.S. Wong, J. Krüger, Y. Cho, B.P. Linder, E.R. Weber
Proc. Symp. 'Light Emitting Devices for Optoelectronic Applications' Electrochem. Soc. p. 377 (1998).; The magnitude of the piezoelectric effect in InGaN quantum wells
P. Perlin, C. Kisielowski, L. Mattos, N.A. Shapiro, J. Krüger, J. Yang, E.R. Weber
Mat. Res. Soc. Symp. Vol. , 187 (1998).; X-ray photoemission spectromicroscopy of GaN and AlGaN
G.F. Lorusso, H. Solak, F. Cerrina, J.H. Underwood, P.J. Batson, Y. Kim, Y. Cho, C. Kisielowski, J. Krüger, E.R. Weber
Mat. Res. Soc. Symp. Vol. , 393 (1998).; High-pressure investigation of InGaN quantum wells
P. Perlin, V. Iota, B.A. Weinstein, H. Teisseyre, T. Suski, S. Hersee, C. Kisielowski, E.R. Weber, J. Yang
Mat. Res. Soc. Symp. Vol. , 399 (1998).; Pressure and temperature dependence of the absorption edge of a thick Ga_0.92In_0.08As_0.985N_0.015 layer
P. Perlin, Sudhir G.S., D.E. Mars, J. Krüger, N.A. Shapiro, H. Siegle, E.R. Weber
Appl. Phys. Lett. 73, 3703 (1998). ONLINE; InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy
P. Perlin, C. Kisielowski, V. Iota, B.A. Weinstein, L. Mattos, N.A. Shapiro, J. Krüger, E.R. Weber, J. Yang
Appl. Phys. Lett. 73, 2778 (1998). ONLINE; Selected-area electron-channeling pattern as a charaterization method for heteroepitaxial layers
S. Mo, E. Peiner, A. Schlachetzki, R. Klockenbrink, E.R. Weber
Mat. Sci. & Engin. B56, 37 (1998). ONLINE; An analysis of temperature dependent photoluminescence line shapes in InGaN
K.L. Teo, J.S. Colton, P.Y. Yu, E.R. Weber, M.F. Li, W. Liu, K. Uchida
Appl. Phys. Lett. 73, 1697 (1998). ONLINE; Pulsed laser deposition of aluminum nitride and gallium nitride thin films
G.S. Sudhir, H. Fujii, W.S. Wong, C. Kisielowski, N. Newman, C. Dieker, Z. Liliental-Weber, M.D. Rubin, E.R. Weber
Appl. Surf. Sci. 127-129, 471 (1998). ONLINE; Control of the structure and surface morphology of gallium nitride and aluminum nitride thin films by nitrogen background pressure in pulsed laser deposition
G.S. Sudhir, H. Fujii, W.S. Wong, C. Kisielowski, N. Newman, C. Dieker, Z. Liliental-Weber, M.D. Rubin, E.R. Weber
J. Electron. Mat. 27, 215 (1998).; Effect of internal absorption on catodoluminescence from GaN
K. Knobloch, P. Perlin, J. Krueger, E.R. Weber, and C. Kisielowski
MRS Internet J. Nitride Semicond. Res. 3,4 (1998). ONLINE; Chemical and structural analysis of nitridated sapphire
Y. Cho, S. Rouvimov, Y. Kim, Z. Lilienthal-Weber, E.R. Weber
Mat. Res. Soc. Symp. Vol. 482, 45 (1998).; Stress controlled MBE-growth of GaN:Mg and GaN:Si
Y. Kim, R. Klockenbrink, C. Kisielowski, J. Krüger, D. Corlatan, Sudhir G.S., Y. Peyrot, Y. Cho, M. Rubin, and E.R. Weber
Mat. Res. Soc. Symp. Vol. 482, 217 (1998). DOWNLOAD (228K); Comparative analysis of strain and stress in MBE and MOCVD grown GaN thin films on sapphire
J. Krüger, Sudhir G.S., D. Corlatan, Y. Cho, Y. Kim, R. Klockenbrink, S. Ruvimov, Z. Lilienthal-Weber, C. Kisielowski, M. Rubin, E.R. Weber, B. McDermott, R. Pittman, E. R. Gertner
Mat. Res. Soc. Symp. Vol. 482, 447 (1998). DOWNLOAD (195K); Localized donors in GaN: spectroscopy using large pressures
C. Wetzel, H. Amano, I. Akasaki, T. Suski, J.W. Ager, E.R. Weber, E.E. Haller, B.K. Meyer
Mat. Res. Soc. Symp. Vol. 482, 489 (1998).; Effect of Mg, Zn, Si and O on the lattice constant of gallium nitride thin films
G.S. Sudhir, Y. Peyrot, J. Krüger, Y. Kim, R. Klockenbrink, C. Kisielowski, M.D. Rubin, and E.R. Weber
Mat. Res. Soc. Symp. Vol. 482, 525 (1998). DOWNLOAD (65K); Photoluminescence characterization of p-type GaN:Mg
D. Corlatan, J. Krüger, C. Kisielowski, R. Klockenbrink, Y. Kim, Sudhir G.S., Y. Peyrot, M. Rubin, and E.R. Weber
Mat. Res. Soc. Symp. Vol. 482, 673 (1998). DOWNLOAD (195K); Atomic scale aluminum and strain distribution in a GaN/Al_xGa_1-xN heterostructure
C. Kisielowski, O. Schmidt and J. Yang; Mat. Res. Soc. Symp. Vol. 482, 369 (1998). DOWNLOAD (325K)

1997: Pressure-induced deep gap state of oxygen in GaN
C. Wetzel, T. Suski, J.W. Ager III, E.R. Weber, E.E. Haller, S. Fischer, B.K. Meyer, R.J. Molnar, P. Perlin
Phys. Rev. Lett. 78, 3923 (1997). ONLINE; Elastic moduli of GaN
R. B. Schwarz, K. Khachaturyan and E. R. Weber
Appl. Phys. Lett. 70, 1122 (1997). ONLINE; MBE-growth of strain engineered GaN thin films utilizing a surfactant
R. Klockenbrink, Y. Kim, M. S.H. Leung, C. Kisielowski, J. Krüger, Sudhir G.S., M. Rubin and E. R. Weber
Mat. Res. Soc. Symp. Vol. 468, 75 (1997). DOWNLOAD; Photoluminescence of strain-engineered MBE-grown GaN and InGaN quantum well structures
J. Krüger, C. Kisielowski, Sudhir G. S., Y. Kim, M. Rubin and E. R. Weber
Mat. Res. Soc. Symp. Vol. 468, 299 (1997). DOWNLOAD (163K); Pressure controlled GaN MBE growth using a hollow anode nitrogen ion source
M. S.H. Leung, R. Klockenbrink, C. Kisielowski, H. Fujii, J. Krüger, Sudhir G.S., A. Anders, Z. Liliental-Weber, M. Rubin, and E.R. Weber
Mat. Res. Soc. Symp. Vol. 449, 221 (1997). DOWNLOAD (813K); Impact of growth temperature, pressure and strain on the morphology of GaN films
H. Fujii, C. Kisielowski, J. Krüger, M.S.H. Leung, R. Klockenbrink, M. Rubin, E.R. Weber
Mat. Res. Soc. Symp. Vol. 449, 227 (1997). DOWNLOAD (943K); Intrinsic and thermal stress in gallium nitride epitaxial films
J.W. Ager, T. Suski, S. Ruvimov, J. Krüger, G. Conti, E.R. Weber, M.D. Bremser, R. Davis, C.P. Kuo
Mat. Res. Soc. Symp. Vol. , 775(1997).; Pulsed excimer laser processing of AlN/GaN thin films
W.S. Wong, L.F. Schloss, Sudihr G.S., B.P. Linder K.-M. Yu, E.R. Weber, T. Sands, N.W. Cheung
Mat. Res. Soc. Vol. , 1011 (1997).; Photoluminescence of donor acceptor pair transitions in hexagonal and cubic MBE-grown GaN
J. Krüger, D. Corlatan, C. Kisielowski, Y. Kim, R. Klockenbrink, Sudhir G. S., M. Rubin and E. R. Weber
Proc. of ICDS-19, Mater. Sci. For. 258-263, 1191 (1997). DOWNLOAD (65K); Control of the structure and surface morphology of gallium nitride and aluminum nitride thin films by nitrogen background pressure in pulsed laser deposition
G. S. Sudhir, H. Fujii, W. S. Wong, C. Kisielowski, N. Newman, C. Dieker, Z. Liliental-Weber, M. D. Rubin and E. R. Weber
J. Electron. Mat. 27, 215 (1997).

1996: Strain-related phenomena in GaN thin films
C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J.W. Ager III, E. Jones, Z. Liliental-Weber, M. Rubin, E.R.Weber, M.D. Bremser, R.F. Davis
Phys. Rev. B 54, 17745 (1996). ONLINE; see also report LBNL-39079.; Homoepitaxial growth of GaN using molecular beam epitaxy
A. Gassmann, T. Suski, N. Newman, C. Kisielowski, E. Jones, E.R. Weber, Z. Lilienthal-Weber, M.D. Rubin, H.I. Helava, I. Grzegory, M. Bockowski, J. Jun, S. Porowski
J. Appl. Phys. 80, 2195 (1996).; Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire
S. Ruvimov, Z. Liliental-Weber, T. Suski, J. W. Ager III, J. Washburn, J. Krüger, C. Kisielowski, E. R. Weber, H. Amano and I. Akasaki
Appl. Phys. Lett. 69, 990 (1996). ONLINE; see also report LBL-38659.; Thermal annealing characteristics of Si and Mg-implanted GaN thin films
J. S. Chan, N. W. Cheung, L. Schloss, E. Jones, W. S. Wong, N. Newman, X. Liu, E. R. Weber, A. Gassman and M. D. Rubin
Appl. Phys. Lett. 68, 2702 (1996). ONLINE; Quantitative HRTEM: A novel approach towards application oriented basic research
C. Kisielowski, Z. Lilienthal-Weber, E.R. Weber
Brazil. J. of Phys. 26, 83 (1996).; Properties of homoepitaxially MBE-grown GaN
T. Suski, J. Krüger, C. Kisielowski, P. Phatak, M.S.H. Leung, Z. Lilienthal-Weber, A. Gassmann, N. Newman, M.D. Rubin, E.R. Weber, I. Grzegory, J. Jun, M. Bockowski, S. Porowski, H.I. Helava
Mat. Res. Soc. Symp. Vol. 423, 329 (1996).; Strain effects in GaN thin film growth
J. Krüger, C. Kisielowski, T. Suski, S. Ruvimov, Z. Liliental-Weber, J.W. Ager III, M. Rubin, and E.R. Weber
Proc. IEEE SIMC-9, Conf. on Semi-Insulating and Semiconducting Materials, Toulouse, 1996, p. 89. DOWNLOAD (163K) ONLINE; see also report LBNL-39338.; Origin of strain in GaN thin films
C. Kisielowski, J. Krüger, M. Leung, R. Klockenbrinck, H. Fujii, T. Suski, Sudhir G.S., J. W. Ager III, M. Rubin, and E.R. Weber
Proc. 23rd Internat. Conf. Phys. Semicond. Vol. 4, World Scientific, Singapore, p. 513 (1996).; Effect of Si-doping on physical properties of gallium nitride layers
T. Suski, J.W. Ager III, G. Conti, Z. Liliental-Weber, J. Krüger, S. Ruvimov, C. Kisielowski, E.R. Weber, C.-P. Kuo, I. Grzegory, S. Porowski
Proc. 23rd Internat. Conf. Phys. Semicond. Vol. 4, World Scientific, Singapore, p. 2917 (1996).; Structural defects in heteroepitaxial and homoepitaxial GaN
Z. Lilienthal-Weber, S. Ruvimov, C. Kisielowski, Y. Chen, W. Swider, J. Washburn, N. Newman, A. Gassmann, X. Liu, L. Schloss, E.R. Weber, I. Grzegory, M. Bockowski, J. Jun, T. Suski, K. Pakula, J. Baranowski, S. Porowski, H. Amano, I. Akasaki
Mat. Res. Soc. Symp.Vol. 395, 351 (1996).; see also report LBL-38159.

Dissertations

Michael Joseph Cich" AlAs Oxidation-Induced Defects in GaAs " Thesis, Ph.D. University of California, Berkeley, 2002

Ri-an Zhao"Growth and Defect Characterization of Low Temperature Molecular Beam Epitaxy GaAs " Thesis, Ph.D. University of California, Berkeley, 2002

Yihwan Kim "Stress and defect control by buffer layers in heteroepitaxial GaN thin films" Thesis, Ph.D., University of California, Berkeley, 2000.

G.S. Sudhir "Effect of strain on GaN and GaInAsN growth and doping" Thesis, Ph.D., University of California, Berkeley, 1999.

Master Theses

Noad Asaf Shapiro "Recombination mechanisms in InGaN quantum wells", Thesis, M.S., University of California, Berkeley, 2000.

Sujit Pillai "Metal Contacts to p-type Gallium Nitride", Thesis, M.S., University of California, Berkeley, 1999.

Yonah Cho "Nitridation of sapphire prior to the growth of GaN: chemical and structural analysis", Thesis, M.S., University of California, Berkeley, 1998.

Evan Russel Jones "Investigation of two low-energy-ion MBE GaN growth techniques and nitrogen self-diffusion in GaN", Thesis, M.S., University of California, Berkeley, 1997.

Sing-Hoi Michael Leung "Gallium nitride growth by MBE with a hollow anode plasma source", Thesis, M.S., University of California, Berkeley, 1997.

Patents

LBNL patent IB-1461: "Novel GaN Thin Film Growth Procedure on Lattice Mismatched Substrates"

LBNL patent IB-1290: "Improved GaN MBE-Growth using Bismuth as a Surfactant"

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Last revised: 05/15/03