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Webergroup publications - Silicon
(1996 - present)


2004

Observation of transition metals at shunt locations in multicrystalline silicon solar cells, T. Buonassisi, O.F. Vyvenko, A.A. Istratov, E.R. Weber, G. Hahn, D. Sontag, J.P. Rakotoniaina, O. Breitenstein, J. Isenberg, and R. Schindler, J. Appl. Phys. 95, 1556 (2004).

Re-dissolution of gettered iron impurities in Czochralski-grown silicon, P. Zhang, A.A. Istratov, H. Vainola, and E.R. Weber, Solid State Phenom. 95-96: 577-579 (2004).

Simulations of iron re-dissolution from oxygen precipitates in Cz-silicon and its impact on gettering efficiency, H. Vainola, P. Zhang, A. Haarahiltunen, A.A. Istratov, and E.R. Weber, Solid State Phenom. 95-96: 581-586 (2004).

Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion length, A.A. Istratov, T. Buonassisi, R.J. McDonald, A.R. Smith, R. Schindler, J. Rand, J.P. Kalejs, and E.R. Weber, Solid State Phenom. 95-96: 175-180 (2004)

Gettering strategies for SOI wafers, A.A. Istratov, W. Huber, and E.R. Weber, Solid State Phenom. 95-96: 547-552 (2004).

X-ray beam induced current/microprobe x-ray fluorescence: synchrotron radiation based x-ray microprobe techniques for analysis of the recombination activity and chemical nature of metal impurities in silicon, O.F. Vyvenko, T. Buonassisi, A.A. Istratov, and E.R. Weber, J Phys-Condens Mat 16(2): S141-S151 (2004).

2003

Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion length, A.A. Istratov, T. Buonassisi, R.J. McDonald, A.R. Smith, R. Schindler, J.A. Rand, J.P. Kalejs, and E.R. Weber J. Appl. Phys. 94, 6552 (2003).

Understanding defects in semiconductors as key to advancing device technology, E.R. Weber, Physica B 340-342, 1 (2003).

The thermal stability of iron precipitates in silicon after internal gettering, Peng Zhang, H. Vainola, A.A. Istratov, and E.R. Weber, Physica B 340-342, 1051 (2003).

Applications of synchrotron radiation X-ray techniques on the analysis of the behavior of transition metals in solar cells and single-crystalline silicon with extended defects, T. Buonassisi, M. Heuer, O.F. Vyvenko, A.A. Istratov, E.R. Weber, Z. Cai, B. Lai, T.F. Ciszek, and R. Schindler, Physica B 340-342, 1137 (2003).

Thermal stability of internal gettering of iron in silicon and its impact on optimization of gettering, P. Zhang, H. Vainola, A.A. Istratov, and E.R. Weber, Appl Phys Lett 83(21): 4324-4326 (2003).

Impact of metal impurities on solar cell performance, A.A.Istratov, T.Buonassisi, E.R.Weber, R.J.McDonald, A.R.Smith, R.Schindler, J.Isenberg, J.Kalejs, J.Rand, P.Geiger, G.Hahn, J.P.Rakotoniaina, and O.Breitenstein. NCPV Review Meeting, Denver, USA (2003).

Assessing the role of transition metals in shunting mechanisms using synchrotron-based techniques, T.Buonassisi, O.F.Vyvenko, A.A.Istratov, E.R.Weber, G.Hahn, D.Sontag, J.P.Rakotoniaina, O.Breitenstein, J.Isenberg, and R.Schindler. 3rd World Photovoltaic Specialists Conference (WCPEC-3), Osaka, Japan (2003).

Statistically meaningful data on the chemical state of iron precipitates in processed multicrystalline silicon using synchrotron-based x-ray absorption spectroscopy, T. Buonassisi, M. Heuer, A.A. Istratov, E.R. Weber, Z. Cai, B. Lai, M.A. Marcus, J. Lu, G. Rozgonyi, R. Schindler, R. Jonczyk, and J. Rand in 13th workshop on crystalline silicon solar cell materials and processes, B. L. Sopori, Editor, NREL, Vail, CO, pp. 96-101 (2003).

Experimental procedure for determination of the depth of metal clusters in XBIC/µ-XRF mapping of metal clusters in silicon solar cells
O.F. Vyvenko, T. Buonassisi, A.A. Istratov, and E.R. Weber in 13th workshop on crystalline silicon solar cell materials and processes, B. L. Sopori, Editor, NREL, Vail, CO, pp. 102-105 (2003).

Neutron activation analysis study of metal content of multicrystalline silicon for cost-efficient solar cells
A.A. Istratov, T. Buonassisi, R.J. McDonald, A.R. Smith, R. Schindler, J.A. Rand, J. Kalejs, and E.R. Weber in 13th workshop on crystalline silicon solar cell materials and processes, B. L. Sopori, Editor, NREL, Vail, CO, pp. 158-161 (2003).

Modeling of competitive gettering of iron in silicon integrated circuit technology
A.A. Istratov, W. Huber, E. R. Weber
Journal of the Electrochemical Society, vol. 150, Iss. 4, G244 (2003) online

 

2002

Computer modeling reveals better advanced gettering methods
A. A. Istratov, E. R. Weber, and W. Huber,
Solid State Technology 45, 95 (2002).

Physics of copper in silicon
A.A. Istratov, and E.R. Weber
J. Electrochem. Soc. 149, G21-30 (2002).

X-ray beam induced current a synchrotron radiation based technique for the in-situ analysis of recombination properties and chemical nature of metal clusters in silicon
O.F. Vyvenko, T. Buonassisi, A.A. Istratov, H. Hieslmair, A.C. Thompson, R. Schindler, and E.R. Weber
J. Appl. Phys. 91, 3614-7 (2002). online

Defect recognition and impurity detection techniques in crystalline silicon for solar cells
A.A. Istratov, H. Hieslmair, O.F. Vyvenko, E.R. Weber, and R. Schindler
Solar Energy Materials and Solar Cells 72, 441-51 (2002).

Precipitation kinetics and recombination activity of Cu in Si in the presence of gettering sites
A.A. Istratov, R. Sachdeva, C. Flink, S. Balasubramanian, and E.R. Weber
Solid State Phenomena 82-84, 323-330 (2002).

2001

Radiation hard silicon detectors-developments by the RD48 (ROSE) collaboration
G. Lindstrom and M. Ahmed and S. Albergo and P. Allport and D. Anderson and L. Andricek and M. M. Angarano and V. Augelli and N. Bacchetta and P. Baralini and R. Bates and U. Biggeri and G. M. Gilei and D. Bisello and D. Boemi and E. Borchi and T. Botila and T. J. Bodbeck and M. Bruzzi and T. Budzynski and P. Burger and F. Campabadal and G. Casse and E. Catacchini and A. Ghilingarov and P. Ciampolini and V. Cindro and M. J. Costa and D. Creanza and P. Clauws and C. Da Via and G. Dacies and W. De Boar and R. Dell'Orso and M. De Palma and B. Dezillie and V. Eremin and O. Evrard and G. Fallica and G. Fanourakis and H. Feick and E. Focardi and L. Fonseca and E. Fretwurst and J. Fuster and K. Gabathuler and M. Glaser and P. Grabiec and E. Grigoriev and G. Hall and M. Hanlon and F. Hauler and S. Heising and A. Holmes-Sidle and R. Horisberger and G. Hughes and M. Huhtinen and I. Ilyashenko and A. Ivanov and B. K. Jones and L. Jungermann and A. Kaminsky and Z. Kohout and G. Kramberger and M. Kuhnke and S. Kwan and F. Lemeilleur and C. Leroy and M. Letheren and Z. Li and T. Ligonzo and V. Linhart and P. Litovchenko and D. Loukas and M. Lozano and Z. Luczynski and G. Lutz and B. MacEvoy and S. Manolopoulos and A. Marlou and C. Martinez and A. Messineo and M. Mikuz and M. Moll and E. Nossarzewska and G. Ottaviani and V. Oshea and G. Parrini and D. Passeri and D. Petre and A. Pickford and I. Pintilie and L. Pintilie and S. Pospisil and R. Potenza and C. Raine and J. M. Rafi and P. N. Ratoff and R. H. Richter and P. Riedler and S. Roe and P. Roy and A. Ruzin and A. I. Ryazanov and A. Santocchia and L. Schiavulli and P. Sicho and I. Siotis and T. Sloan and W. Slysz and K. Smith and M. Solanky and B. Sopko and K. Stolze and B. Sundby Avset and B. Svensson and C. Tivarus and G. Tonelli and A. Tricomi and S. Tzamarias and G. Valvo and A. Vasilescu and A. Vayaki and E. Verbitskaya and P. Verdini and V. Vrba and S. Watts and E. R. Weber and M. Wegrzecki and I. Wegrzecka and P. Weilhammer and R. Wheadon and C. Wilburn and I. Wilhelm and R. Munstorf and J. Wustenfeld and J. Wyss and K. Zankel and P. Zabierowski and D. Zontar,
Nuclear Instruments & Methods in Physics Research, Section A (Accelerators, Spectrometers, Detectors and Associated Equipment) 466, 308 (2001).


Developments for radiation hard silicon detectors by defect engineering-results by the CERN RD48 (ROSE) Collaboration
G. Lindstrom and M. Ahmed and S. Albergo and P. Allport and D. Anderson and L. Andricek and M. M. Angarano and V. Augelli and N. Bacchetta and P. Bartalini and R. Bates and U. Biggeri and G. M. Bilei and D. Bisello and D. Boemi and E. Borchi and T. Botila and T. J. Brodbeck and M. Bruzzi and T. Budzynski and P. Burger and F. Campabadal and G. Casse and E. Catacchini and A. Chilingarov and P. Ciampolini and V. Cindro and M. J. Costa and D. Creanza and P. Clauws and C. Da Via and G. Davies and W. De Boer and R. Dell'Orso and M. De Palma and B. Dezillei and V. Eremin and O. Evrard and G. Fallica and G. Fanourakis and H. Feick and E. Focardi and L. Fonseca and E. Fretwurst and J. Fuster and K. Gabathuler and M. Glaser and P. Grabiec and E. Grigoriev and G. Hall and M. Hanlon and F. Hauler and S. Heising and A. Holmes-Siedle and R. Horisberger and G. Hughes and M. Huhtinen and I. Ilyashenko and B. K. Jones and L. Jungermann and A. Kaminsky and Z. Kohout and G. Kramberger and M. Kuhnke and S. Kwan and F. Lemilleur and C. Leroy and M. Letheren and Z. Li and T. Ligonzo and V. Linhart and P. Litovchenko and D. Loukas and M. Lozano and Z. Lucczynski and G. Lutz and B. MacEvoy and S. Manolopoulos and A. Markou and C. Martinez and A. Messineo and M. Miku and M. Moll and E. Nossarzewska and G. Ottaviani and V. Oshea and G. Parrini and D. Passeri and D. Petre and A. Pickford and L. Pintilie and S. Pospisil and R. Potenza and V. Radicci and C. Raine and J. M. Rafi and P. N. Ratoff and R. H. Richter and P. Riedler and S. Roe and P. Roy and A. Ruzin and A. I. Ryazanov and A. Santocchia and L. Schiavulli and P. Sicho and I. Siotis and T. Sloan and W. Slysz and K. Smith and M. Solanky and B. Sopko and K. Stolze and B. Sundby Avset and B. Svensson and C. Tivarus and G. Tonelli and A. Tricomi and S. Tzamarias and G. Valvo and A. Vasilescu and A. Vayaki and E. Verbitskaya and P. Verdini and V. Vrba and S. Watts and E. R. Weber and M. Wegrzecki and I. Wegrzecka and P. Weilhammer and R. Wheadon and C. Wilburn and I. Wilhelm and R. Wunstorf and J. Wustenfeld and J. Wyss and K. Zankel and P. Zabierowski and D. Zontar
Nuclear Instruments & Methods in Physics Research, Section A (Accelerators, Spectrometers, Detectors and Associated Equipment) 465, 60 (2001).

"Recombination activity of copper in silicon"
R.Sachdeva, A.A.Istratov, and E.R.Weber
Applied Physics Letters 79, no. 18, 2937-9 (2001).

"Gettering simulator: physical basis and algorithm"
H.Hieslmair, S.Balasubramanian, A.A.Istratov, and E.R.Weber
Semiconductor Science and Technology 16, 567-574 (2001).

"Modeling of metal impurity gettering"
A.A.Istratov, H.Hieslmair, and E.R.Weber
in: "Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing III", Edited by B.O.Colbesen, C.Claeys, P.Stallhofer, and F.Tardif, ECS proceedings volume 2001-29 (The Electrochemical Society, Pennington, NJ, 2001), p. 267-81.

"The importance of the physics of copper in silicon for development and characterization of copper diffusion barriers"
A.A.Istratov and E.R.Weber
in "Copper interconnects, new contact metallurgies/structures, and low-k interlevel dielectrics", Edited by G.S.Mathad, H.S.Rathore, T.L.Ritzdorf, B.C.Baker, and C.Reidsema-Simpson, ECS Proceedings 2000-27 (The Electrochemical Society, Pennington, NJ, 2001), p. 90-111


"The role of transition metals in solar cell efficiency"

A.A.Istratov and E.R.Weber
in 11-th workshop on crystalline silicon solar cell materials and processes, B. L. Sopori, Editor, NREL, Golden, CO, p.11-17 (2001), available electronically at http://www.doe.gov/bridge.

"Application of X-ray fluorescence microprobe technique for the analysis of fully processed solar cells"
O.F.Vyvenko, A.A.Istratov, T.Buonassisi, E.R.Weber, and R.Schindler
in 11-th workshop on crystalline silicon solar cell materials and processes, B. L. Sopori, Editor, NREL, Golden, CO, p.172-176 (2001), available electronically at http://www.doe.gov/bridge.

"Impact of copper on minority carrier diffusion length in p-type and n-type silicon"
R.Sachdeva, A.A.Istratov, and E.R.Weber
in 11-th workshop on crystalline silicon solar cell materials and processes, B. L. Sopori, Editor, NREL, Golden, CO, 168-171 (2001), available electronically at http://www.doe.gov/bridge.

2000
"Out-diffusion and precipitation of copper in silicon: an electrostatic model"
C.Flink, H.Feick, S.A.McHugo, W.Seifert, H.Hieslmair, T.Heiser, A.A.Istratov, and E.R.Weber
Physical Review Letters 85, 4900-3 (2000).

"Impact of the unique physical properties of copper in silicon on characterization of copper diffusion barriers"
A.A.Istratov, C.Flink, and E.R.Weber
physica status solidi (b) 222, 261-77 (2000).

"Temperature dependence of the iron donor level in silicon at device processing temperatures"
H.Kohno, H.Hieslmair, A.A.Istratov, and E.R.Weber
Applied Physics Letters 76, no. 19, 2734-6 (2000).

"Iron contamination in silicon technology"

A.A.Istratov, H.Hieslmair, and E.R.Weber,, Applied Physics A 70, 489-534 (2000)
"Temperature dependence of the iron donor level in silicon at device processing temperatures"
H.Kohno, H.Hieslmair, A.A.Istratov, and E.R.Weber
Appl. Phys. Lett. 76, no. 19, 2734-6 (2000)
online
 
"Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors"
S.D.Ganichev, E.Ziemann, W.Prettl, I.N.Yassievich, A.A.Istratov, and E.R.Weber
Physical Review B 61, no. 15, 10361-5 (2000).
 
"Diffusion, solubility and gettering of copper in silicon"
A.A.Istratov, C.Flink, H.Hieslmair, S.A.McHugo, and E.R.Weber
Mater. Science and Engineering B 72, no.2-3, p. 99-104 (2000)

"Identification of metal-oxygen complexes as lifetime limiting defects in solar cell materials"
E.R.Weber, S.A.McHugo, A.A.Istratov, C.Flink, and H.Hieslmair, , in: Proceedings of the NCPV program review meeting, April 16-19, Denver, Colorado, published by NREL and available electronically at http:/www.doe.gov/bridge, p.131-132 (2000)
 
"Advanced gettering techniques in ULSI technology"
A.A.Istratov, H.Hieslmair, and E.R.Weber
MRS Bulletin 25, no. 6, 33-38 (2000)

"Synchrotron-based impurity mapping"
S.A.McHugo, A.C.Thompson, C.Flink, E.R.Weber, G.Lamble, B.Gunion, A.MacDowell, R.Celestre, H.A.Padmore, Z.Hussain
J.Cryst.Growth 210, 395-400 (2000).

"Progress in understanding the physics of copper in silicon"
A.A.Istratov, C.Flink, S.Balasubramanian, E.R.Weber, H.Hieslmair, S.A.McHugo, H.Hedemann, M.Seibt, and W.Schröter
in "High purity silicon VI", Edited by C.L.Claeys, P.Rai-Choudhury, M.Watanabe, P.Stallhofer, and H.J.Dawson, ECS Proceedings 2000-17 (The Electrochem. Soc., Pennington, NJ, 2000), p. 258-77.

"Physics of copper in silicon: point defect reactions, diffusion and gettering"
A.A.Istratov, C.Flink, H.Hieslmair, S.Balasubramanian, E.R.Weber, H.Hedemann, M.Seibt, and W.Schröter
in Proceedings of the 3rd International Symposium on Advanced Science and Technology of Silicon Materials, Nov. 20-24, 2000, Aston Keauhou Beach Resort (Kona, Hawaii, USA), published by the 145th committee on processing and characterization of crystals, The Japan Society for the Promotion of Science, p. 152-161 (2000).

"Predictive simulation of transition metal behavior in silicon"
E.R.Weber, H.Hieslmair, S.Balasubramanian, and A.A.Istratov
in Proceedings of the 3rd International Symposium on Advanced Science and Technology of Silicon Materials, Nov. 20-24, 2000, Aston Keauhou Beach Resort (Kona, Hawaii, USA), published by the 145th committee on processing and characterization of crystals, The Japan Society for the Promotion of Science, p. 313-319 (2000).

"Gettering of iron in silicon: quantitative characterization and modeling"
H.Hieslmair, H.Kohno, A.A.Istratov, and E.R.Weber
in Proceedings of the 3rd International Symposium on Advanced Science and Technology of Silicon Materials, Nov. 20-24, 2000, Aston Keauhou Beach Resort (Kona, Hawaii, USA), published by the 145th committee on processing and characterization of crystals, The Japan Society for the Promotion of Science, p. 513-521 (2000)

"Application of synchrotron radiation-based X-ray fluorescence microprobe to detect impurities at the location of shunt"
C.Flink, S.A.McHugo, W.Seifert, M.Langenkamp, A.A.Istratov, R.Sachdeva, and E.R.Weber
in proceedings of the 10-th workshop on crystalline silicon solar cell materials and processes (Copper Mountain, CO, USA, Aug. 14-16, 2000), p.212-5 (2000), published by NREL and available electronically at http://www.doe.gov/bridge.

"New synchrotron-radiation based technique to study localized defects in silicon: "EBIC" with X-ray excitation"
H.Hieslmair, A.A.Istratov, R.Sachdeva, and E.R.Weber
in proceedings of the 10-th workshop on crystalline silicon solar cell materials and processes (Copper Mountain, CO, USA, Aug. 14-16, 2000), p.162-5 (2000), published by NREL and available electronically at http://www.doe.gov/bridge.

"Transition metals in silicon: the continuing story"
E.R.Weber and A.A.Istratov
in proceedings of the 10-th workshop on crystalline silicon solar cell materials and processes (Copper Mountain, CO, USA, Aug. 14-16, 2000), p.8-11 (2000), published by NREL and available electronically at http://www.doe.gov/bridge.

"Study of precipitation/outdiffusion of copper in CZ and EFG silicon wafers"
C.Flink, S.Balasubramanian, A.A.Istratov, R.Sachdeva, and E.R.Weber
in proceedings of the 10-th workshop on crystalline silicon solar cell materials and processes (Copper Mountain, CO, USA, Aug. 14-16, 2000), p.216-9 (2000), published by NREL and available electronically at http://www.doe.gov/bridge.

"Identification of metal-oxygen complexes as lifetime limiting defects in solar cell materials"
E.R.Weber, S.A.McHugo, A.A.Istratov, C.Flink, and H.Hieslmair
in: Proceedings of the NCPV program review meeting, April 16-19, Denver, Colorado, published by NREL and available electronically at http:/www.doe.gov/bridge, p.131-132 (2000).

 
 
1999


"Physics of iron in silicon: how much do we know after 35 years of research?"

A.A.Istratov, H.Hieslmair, and E.R.Weber
Proceedings of the ninth workshop on crystalline silicon solar cell materials and processes (Beaver Run Resort, Breckenridge, Colorado, USA, August 9-11, 1999), p.16-29.

"Experiments and computer simulations of p/p+ gettering of iron in silicon"
H.Hieslmair, A.A.Istratov, C.Flink, W.Seifert, S.A.McHugo, and E.R.Weber
P proceedings of the ninth workshop on crystalline silicon solar cell materials and processes (Beaver Run Resort, Breckenridge, Colorado, USA, August 9-11, 1999), p.143

"About the reaction path of copper in silicon"
C.Flink, H.Feick, S.A.McHugo, W.Seifert, H.Hieslmair, A.A.Istratov, and E.R.Weber
P roceedings of the ninth workshop on crystalline silicon solar cell materials and processes (Beaver Run Resort, Breckenridge, Colorado, USA, August 9-11, 1999), p.144-147

"Structural and electrical properties of metal silicide precipitates in silicon"
M.Seibt, H.Hedemann, A.A.Istratov, F.Riedel, A.Sattler, and W.Schröter
physica status solidi (a) 171, 301-10 (1999).

"Exponential analysis in physical phenomena"
A.A.Istratov and O.F.Vyvenko
Review of Scientific Instruments, 70, no. 2, pp.1233-57 (1999).

"Electrical characterization of copper related defect reactions in silicon"
T.Heiser, A.A.Istratov, C.Flink, and E.R.Weber
Material Science and Engineering B 58, 149-154 (1999).

"Iron and its complexes in silicon"
A.A.Istratov, H.Hieslmair, and E.R.Weber
Applied Physics A 69, 13-44 (1999).

"Gettering of transition metals in crystalline silicon"
H.Hieslmair, S.A.McHugo, A.A.Istratov, and E.R.Weber
Chapter 15 in EMIS datareviews series #20 "Properties of Crystalline Silicon", (15.1, "Gettering in silicon technology", 15.2, "Gettering mechanisms", 15.3, "Gettering techniques", 15.4, "Summary of current state of understanding", 15.5, "Future trends"), Ed. by R.Hull (Inspec, Short Run Press, Exeter, 1999), pp.775-808 (ISBN 0 85296 933 3)


"Gettering in Silicon"
S.A. McHugo and H. Hieslmair
Wiley Encyclopedia of Electrical and Electronics Engineering, vol. 8, John G. Webster editor, John Wiley and Sons publisher based in New York, pgs. 388-414, 1999

"High field limitation of Poole-Frenkel emission caused by tunneling"
S.D.Ganichev, E.Ziemann, W.Prettl, A.A.Istratov, and E.R.Weber
in "Luminescent materials", Edited by J. McKittrick, B. Di Bartolo, and K. Mishra, MRS Symp. Proc. Vol. 560 (Mat. Res. Soc., Warrendale, PA, 1999), pp. 239-243 [ISBN 1-55899-467-X].

"Fe/Cu precipitation and precipitate dissolution in silicon"
H.Hieslmair, A.A.Istratov, C.Flink, and E.R.Weber
in "Proceedings of the 15th NCPV photovoltaics program review" (Denver, Colorado, September 1998), Eds: M. Al-Jassim, J.P. Thornton, and J.M. Jee, AIP Conf. Proc. 462 (American Institute of Physics, Woodbury, NY, 1999, ISBN 1-56396-836-3), p. 418-423.

"What do we know about iron in silicon after 45 years of research"
A.A.Istratov, H.Hieslmair, and E.R.Weber
Physica B 273-274, 412-5 (1999)

"Formation of copper precipitates in silicon"
C.Flink, H.Feick, S.A.McHugo, A.Mohammed, W.Seifert, H.Hieslmair, T.Heiser, A.A.Istratov, and E.R.Weber
Physica B 273-274, 437-40 (1999)

"Experiments and Computer Simulations of iron profiles in p/p+ silicon: segregation and the position of the iron donor level"
H. Hieslmair, A. A. Istratov, C. Flink, W. Seifert, E. R. Weber
Physica B 273-274, 441-4 (1999).

"Metal impurity precipitates in silicon: chemical state and stability"
S.A.McHugo, A.C.Thompson, G.Lamble, C.Flink, and E.R.Weber, , Physica B 273-274, 371-4 (1999)

"Annealing kinetics of the photoluminescence W-center in proton-irradiated silicon"
H. Feick and E.R. Weber
Physica B 273-274, 497 (1999).

 
1998
"Determination of parameters of deep level defects from numerical fit of DLTS spectra: analysis of accuracy and sensitivity to noise"
A.A.Istratov, H.Hieslmair, C.Flink, E.R.Weber
Rev. Sci. Instrum., 69, 244-50 (1998).
 
"Electrical properties and recombination activity of copper, nickel and cobalt in silicon"
A.A.Istratov, E.R.Weber
Appl.Phys.A 66, 123 (1998)

"The dissociation energy and the charge state of a copper-pair center in silicon"
A.A.Istratov, H.Hieslmair, T.Heiser, C.Flink, E.R.Weber Appl.Phys.Lett. 72, 474-476 (1998).
 
"Critical analysis of weighting functions for the deep level transient spectroscopy of semiconductors"
A.A.Istratov, O.F.Vyvenko, H.Hieslmair, E.R.Weber
Measurement Science and Technology, 9, no.3, 477-484 (1998).
 
"Formation and properties of copper silicide precipitates in silicon"
M.Seibt, M.Grieb, A.A.Istratov, H.Hedemann, A.Sattler, W.Schröter
phys.stat.sol.(a) 166, no.3, p.171-182 (1998)
 
"Gettering of iron by oxygen precipitates",
H.Hieslmair, A.A.Istratov, S.A.McHugo, C.Flink, T.Heiser, E.R.Weber
Appl.Phys.Lett. 72, no.12, p.1460-1462 (1998)
 
"Electrical and recombination properties of precipitated and interstitial copper in silicon"
A.A.Istratov, H.Hedemann, M.Seibt, O.F.Vyvenko, W.Schröter, C.Flink, T.Heiser, H.Hieslmair and E.R.Weber
in "Semiconductor Silicon-1998", Eds. H.R.Huff, H.Tsuya and U.Gösele, Electrochem.Soc.Proc. 98-1, p.948-966 (The Electrochem.Soc., Pennington, NJ, 1998). [ISBN 1-56677-193-5]
 
"A note on the diffusion coefficient of interstitial copper in silicon"
A.A.Istratov, C.Flink, T.Heiser, H.Hieslmair and E.R.Weber
in "Semiconductor Silicon-1998", Eds. H.R.Huff, H.Tsuya and U.Gösele, Electrochem.Soc.Proc. 98-1, p.967-972 (The Electrochem.Soc., Pennington, NJ, 1998). [ISBN 1-56677-193-5]
 
"Analysis of iron Precipitation in Silicon as a Basis for Gettering Simulations"
H.Hieslmair, A.A.Istratov, S.A.McHugo, C.Flink, E.R.Weber
in "Semiconductor Silicon-1998", Eds. H.R.Huff, H.Tsuya and U.Gösele, Electrochem.Soc.Proc. 98-1, p.1126-1137 (The Electrochem.Soc., Pennington, NJ, 1998). [ISBN 1-56677-193-5]
 
"Analysis of iron precipitation in silicon as a basis for gettering simulations"
H.Hieslmair, A.A.Istratov, S.A.McHugo, C.Flink, and E.R.Weber
Abstract No. 359 in "Meeting Abstracts of the 193rd meeting of the Electrochemical Society, Inc." (May 3-8, 1998, San Diego, CA, U.S.A.) (The Electrochemical Soc., Pennington, NJ) [ISSN 1091-8213]
 
"Electrical and recombinative properties of precipitated and interstitial copper in silicon"
A.A.Istratov, H.Hedemann, M.Seibt, O.F.Vyvenko, W.Schröter, C.Flink, H.Hieslmair, T.Heiser, and E.R.Weber
Abstract No. 346 in "Meeting Abstracts of the 193rd meeting of the Electrochemical Society, Inc." (May 3-8, 1998, San Diego, CA, U.S.A.) (The Electrochemical Soc., Pennington, NJ) [ISSN 1091-8213].
 
"Evaluation of precipitate densities and capture radii from the analysis of precipitation kinetics"
H.Hieslmair, A.A.Istratov, T.Heiser, E.R.Weber
Journal of Applied Physics 84, no.2, p.713-17 (1998).
 
"Intrinsic diffusion coefficient of interstitial copper in silicon"
A.A.Istratov, C.Flink, H.Hieslmair, E.R.Weber, and T.Heiser
Physical Review Letters 81, no.6, 1243-6 (1998).
 
"Transient ion-drift-induced capacitance signals in semiconductors"
T.Heiser, E.R.Weber
Phys.Rev.B 58, 3893-903 (1998).
"Iron solubility in highly boron-doped silicon"
S.A. McHugo, R.J. McDonald, A.R. Smith, D.L. Hurley, and E.R.Weber
Applied Physics Letters 73 (no.10), 1424-6 (1998)
 
"Improvement of material parameters of silicon by gettering"
A.A.Istratov, S.A.McHugo, H.Hieslmair, and E.R.Weber
proceedings of the 8th workshop on crystalline silicon solar cell materials and processes (Copper Mountain, CO, August 17-19, 1998), NREL, Golden, Colorado (1998), p.153-69
 
"Interstitial copper in silicon"
A.A.Istratov, C.Flink, T.Heiser, H.Hieslmair and E.R.Weber
proceedings of the 8th workshop on crystalline silicon solar cell materials and processes, (Copper Mountain, CO, August 17-19, 1998), NREL, Golden, Colorado (1998), p.141-5
 
"Minority carrier diffusion length degradation in silicon: who is the culprit?"
E.R.Weber, A.A.Istratov, S.McHugo, H.Hieslmair, C.Flink
in: Recombination Lifetime Measurements in Silicon", ASTM STP 1340, Eds: D.C.Gupta, F.R.Bacher, and W.M.Hughes (American Soc. For Testing and Materials, West Conshohocken, PA, 1998), pp.18-29 (ISBN 0-8031-2489-9).
 
"Studies of the microscopic nature of Cu-pairs in silicon"
A.A.Istratov, T.Heiser, H.Hieslmair, C.Flink, E.R.Weber
in "Defect and Impurity Engineered Semiconductors and Devices II", Eds. S.Ashok, J.Chevallier, K.Sumino, B.L.Sopori, and W.Götz, MRS symp.proc. 510 (1998), 355-60 (ISBN: 1-55899-416-5)
 
"Charge states of copper-silicide precipitates in silicon and its application to the understanding of copper precipitation kinetics"
A.A.Istratov, O.F.Vyvenko, C.Flink, T.Heiser, H.Hieslmair and E.R.Weber
in "Defect and Impurity Engineered Semiconductors and Devices II", Eds. S.Ashok, J.Chevallier, K.Sumino, B.L.Sopori, and W.Götz, MRS symp.proc. 510 (1998), 313-8. (ISBN: 1-55899-416-5)
 
"Iron and nickel solubilities in heavily doped silicon and their energy levels in the silicon band gap at elevated temperatures"
S.A.McHugo, R.J.McDonald, A.R.Smith, D.L.Hurley, A.A.Istratov, H.Hieslmair and E.R.Weber
in "Defect and Impurity Engineered Semiconductors and Devices II", Eds. S.Ashok, J.Chevallier, K.Sumino, B.L.Sopori, and W.Götz, MRS symp.proc. 510 (1998), 361-6. (ISBN: 1-55899-416-5)
 
"Formation of Subthreshold Defects in Erbium implanted Silicon"
C.Flink, S.Mui, H.Gottschalk, J.Palm, and E.R.Weber
in "Silicon front-end technology - materials processing and modelling" (Eds: N.E.B. Cowern, D.C. Jacobson, P.B.Griffin, P.A. Packan, and R.P. Webb, Mat.Res.Symp.Proc. 532, 177 (1998) (Mat.Res.Soc., Warrendale, PA) (ISBN 1-55899-438-6)
 
"Electrical and recombination properties of copper-silicide precipitates in silicon"
A.A.Istratov, H.Hedemann, M.Seibt, O.F.Vyvenko, W.Schröter, T.Heiser, C.Flink, H.Hieslmair and E.R.Weber
Journal of the Electrochemical Society 145, no.11, 3889-98 (1998).
 
"Time-temperature profiles for optimal internal gettering"
H.Hieslmair, A.A.Istratov, and E.R.Weber
Semiconductor Science and Technology 13, no.12, 1401-6 (1998).
 
"Analysis of iron Precipitation in silicon as a basis for gettering simulations"
H.Hieslmair, A.A.Istratov, S.A.McHugo, C.Flink, E.R.Weber
Journal of the Electrochemical Society 145, 4259-64 (1998)
 
"The nature of the electronic states of Cu3Si-precipitates in Silicon"
A.Sattler, H.Hedemann, A.A.Istratov, M.Seibt, and W.Schröter
Solid State Phenomena 63-64, 369-74 (1998)
 
"Direct correlation of solar cell performance with metal impurity distributions in polycrystalline silicon using synchrotron-based X-ray analysis"
S.A. McHugo, A.C. Thompson, G. Lamble, A. MacDowell, R. Celestre, H. Padmore, M. Imaizumi, M. Yamaguchi, I. Perichaud, S. Martinuzzi, M. Werner, M. Rinio, H.J. Moller, B. Sopori, H. Hieslmair, C. Flink, A. Istratov, E.R. Weber
in "Application of Synchrotron Radiation Techniques to Materials Science IV", Eds: S.M. Mini, S.R. Stock, D.L. Perry, L.J. Terminello, (Mat.Res.Soc., Warrendale, PA), MRS Symp.Proc. 524 (1998) (ISBN 1-55899-430-0), p. 297-302
 
 
1997
 
Low level Cu contamination studied by transient ion drift
T.Heiser, S.McHugo, H.Hieslmair, C.Flink, A.A.Istratov, and E.R.Weber
Proceedings of the Seventh Workshop on the role of impurities and defects in silicon device processing, August 11-13, Vail, Colorado, p.233-236 (1997). DOWNLOAD (325K)
 
Precipitation of Iron in Silicon
H. Hieslmair, A. A. Istratov, T. Heiser, C. Flink and E. R. Weber, Proc. 7th Workshop on the Role of Impurities and Defects in Silicon Device Processing, August 11-13, 1997, Vail, Colorado, p.187-190 (1997). DOWNLOAD (358K)
Transition Metals and Lifetime in PV Silicon
A. A. Istratov and E. R. Weber, Proceedings of the Seventh Workshop on the role of impurities and defects in silicon device processing, August 11-13, Vail, Colorado, p.31-40 (1997)
 
Potential Influence of the Recombination of Minority Carriers on Interstitial and Precipitated Copper in Silicon on Solar Cell Efficiency
A. A. Istratov, H. Hieslmair, T. Heiser, C. Flink and E. R. Weber, Proceedings of the seventh Workshop on the role of impurities and defects in silicon device processing, August 11-13, Vail, Colorado, p.158-161 (1997)
 
Lifetime degradation in silicon: who is the culprit?
E. R. Weber, A. A. Istratov, S. McHugo, H. Hieslmair and C. Flink, Proc. Advanced Workshop on Lifetime Measurements in Silicon, Santa Clara CA, June 1997. DOWNLOAD (748K)
 
Precipitation of iron in FZ and CZ silicon
H.Hieslmair, C.Flink, S.McHugo, A.Istratov, E.R.Weber
Proceedings of the international conference on defects in semiconductors ICDS-19 (Aveiro, Portugal, July 21-25, 1997), Eds. G.Davies and M.H.Nazare, Mat.Sci.Forum 258-263, 449-54 (1997)
Copper in Silicon: quantitative analysis of internal and proximity gettering
S.McHugo, T.Heiser, H.Hieslmair, C.Flink, E.R.Weber, S.M.Myers, G.A.Petersen
Proceedings of the international conference on defects in semiconductors ICDS-19 (Aveiro, Portugal, July 21-25, 1997), Eds. G.Davies and M.H.Nazare, Mat.Sci.Forum 258-263, 461-6 (1997)
 
A study of the copper-pair related centers in silicon
A.A.Istratov, T.Heiser, C.Flink, H.Hieslmair, J.Krüger, E.R.Weber
Proceedings of the international conference on defects in semiconductors ICDS-19, (Aveiro, Portugal, July 21-25, 1997), Eds. G.Davies and M.H.Nazare, Mat.Sci.Forum 258-263, 467-72 (1997)
 
Rate limiting mechanism of transition metal gettering in multicrystalline silicon
S.A.McHugo, A.C.Thompson, M.Imaizumi, H.Hieslmair, E.R.Weber
Proceedings of the international conference on defects in semiconductors ICDS-19, (Aveiro, Portugal, July 21-25, 1997), Eds. G.Davies and M.H.Nazare, Mat.Sci.Forum 258-263, 1795-800 (1997)
Interstitial copper-related center in n-type silicon
A.A.Istratov, H.Hieslmair, C.Flink, T.Heiser, E.R.Weber, Appl.Phys.Lett., 71, no.16, 2349-2351 (1997)
 
Influence of interstitial copper on diffusion length and lifetime of minority carriers in p-type silicon
A. A. Istratov, C. Flink, H. Hieslmair, T. Heiser and E. R. Weber, Appl. Phys. Lett. 71, 2121 (1997). 
 
Transient ion drift detection of low level copper contamination in silicon
T. Heiser, S. A. McHugo, H. Hieslmair and E. R. Weber, Appl. Phys. Lett. 80, 3576 (1997). 
 
Low level Cu contamination of silicon during wet cleaning studied by transient ion drift
T. Heiser, S. McHugo, H. Hieslmair and E. R. Weber, in: "Defects and Diffusion In Silicon Processing", Eds: T.Diaz de la Rubia, S.Coffa, P.A.Stolk, C.S.Rafferty, MRS conf. Proc. 469, p.475-80 (Pittsburg, PA, USA: Mater.Res.Soc. 1997)
 
Gettering of metallic impurities in photovoltaic silicon
S. A. McHugo, H. Hieslmair and E. R. Weber, Appl. Phys. A 64, 127 (1997).
 
Transition metal gettering for VLSI and beyond, invited paper
E. R. Weber, H. Hieslmair, S. A. McHugo, C. Flink and A. Istratov, Spring `97 MRS Meeting, San Francisco (1997).
 
1996
 
Aluminum backside segregation
H. Hieslmair, S. A. McHugo and E. R. Weber, Proc. 25th IEEE Photovoltaic Specialists Conference, Washington DC, 1996. DOWNLOAD
 
Gettering of transition metals in multicrystalline silicon for photovoltaic applications
E. R. Weber, S. A. McHugo and H. Hieslmair,p. 165 in Diffusion and Defect Data Part B, vol. 47-48 (Trans Tech Publications), 1996. DOWNLOAD
 
Competitive gettering of copper in Czochralski silicon by implantation-induced cavities and internal gettering sites
S. A. McHugo, E. R. Weber, S. M. Myers and G. A. Peterson,
Appl. Phys. Lett. 69, 3060 (1996). 


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