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Webergroup publications

1996-present:

1974-2000:


Selected recent publications

  • Observation of transition metals at shunt locations in multicrystalline silicon solar cells
    T. Buonassisi, O.F. Vyvenko, A.A. Istratov, E.R. Weber, G. Hahn, D. Sontag, J.P. Rakotoniaina, O. Breitenstein, J. Isenberg, and R. Schindler
    J. Appl. Phys. 95, 1556 (2004).online
  • Thermal stability of internal gettering of iron in silicon and its impact on optimization of gettering
    P. Zhang, H. Vainola, A.A. Istratov, and E.R. Weber
    Appl Phys Lett 83, 4324 (2003).online
  • Modeling of competitive gettering of iron in silicon integrated circuit technology
    A.A. Istratov, W. Huber, E. R. Weber
    J. Electrochem. Soc. 150, G244 (2003).online
  • Generation-recombination low-frequency noise signatures in GaAs metal–semiconductor field-effect transistors on laterally oxidized AlAs
    S. Y. Tzeng, M. J. Cich, R. Zhao, H. Feick, and E. R. Weber
    Appl. Phys. Lett. 82, 1063 (2003). online
  • Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN
    Qing Yang, H. Feick, E.R. Weber
    Appl. Phys. Lett. 82, 3002 (2003). online
  • Contributions from gallium vacancies and carbon-related defects to the "yellow luminescence" in GaN
    R. Armitage, William Hong, Qing Yang, H. Feick, J. Gebauer, E. R. Weber, S. Hautakangas and K. Saarinen
    Appl. Phys. Lett. 82, 3457 (2003).online
  • Physics of imaging p-n junctions by scanning tunneling microscopy and spectroscopy
    N. D. Jäger, M. Marso, M. Salmeron, E. R. Weber, K. Urban, Ph. Ebert
    Phys. Rev. B. 67, 165307 (2003). online
  • Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy
    J. Gebauer, E. R. Weber, N. D. Jäger, K. Urban, Ph. Ebert
    Appl. Phys. Lett. 82, 2059 (2003). online
  • Lattice-matched HfN buffer layers for epitaxy of GaN on Si
    R. Armitage, Qing Yang, H. Feick, J. Gebauer, E.R. Weber, Satoko Shinkai, Katsutaka Sasaki
    Appl. Phys. Lett. 81, 1450 (2002). online
  • Dopant atom clustering and charge screening induced roughness of electronic interfaces in GaAs p-n multilayers
    N. D. Jäger, K. Urban, E. R. Weber, and Ph. Ebert
    Phys. Rev. B. 65, 235302 (2002). online
  • In-situ diffuse reflectance spectroscopy investigation of low-temperature-grown GaAs
    Ri–an Zhao, Michael J. Cich, Petra Specht, and Eicke R. Weber
    Appl. Phys. Lett. 80, 2060 (2002).online
  • X-ray beam induced current a synchrotron radiation based technique for the in-situ analysis of recombination properties and chemical nature of metal clusters in silicon
    O.F. Vyvenko, T. Buonassisi, A.A. Istratov, H. Hieslmair, A.C. Thompson, R. Schindler, and E.R. Weber
    J. Appl. Phys. 91, 3614-7 (2002). online

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Last revised: 08/01/03

 

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