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Webergroup publications - GaAs and related materials
(1996 - present)


2004

The influence of structural properties on conductivity and luminescence of MBE grown InN,
P. Specht, R. Armitage, J. Ho, E. Gunawan, Q. Yang, X. Xu, C. Kisielowski, E.R. Weber
J. of Cryst. Growth 269, 111 (2004)

2003

Impact of beryllium dopants on the stability of LT-grown AlAs/GaAs:Be heterostructures against thermally activated intermixing
K. Tillmann, M. Luysberg, P. Specht, E.R. Weber
Thin Solid Films 437, 74 (2003)

Importance of carrier dynamics and conservation of momentum in atom-selective STM imaging and band gap determination of GaAs(110)
N. D. Jäger, E. R. Weber, K. Urban, and Ph. Ebert
Phys. Rev. B 67, 165327 (2003). online

Nanoscale dopant-induced dots and potential fluctuations in GaAs
N. D. Jäger, K. Urban, E. R. Weber, and Ph. Ebert
Appl. Phys. Lett. 82, 2700 (2003). online

Physics of imaging p-n junctions by scanning tunneling microscopy and spectroscopy
N. D. Jäger, M. Marso, M. Salmeron, E. R. Weber, K. Urban, Ph. Ebert
Phys. Rev. B. 67, 165307 (2003). online

Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy
J. Gebauer, E. R. Weber, N. D. Jäger, K. Urban, Ph. Ebert
Appl. Phys. Lett. 82, 2059 (2003). online

Generation-recombination low-frequency noise signatures in GaAs metal–semiconductor field-effect transistors on laterally oxidized AlAs
S. Y. Tzeng, M. J. Cich, R. Zhao, H. Feick, and E. R. Weber
Appl. Phys. Lett. 82, 1063 (2003). online

2002

Direct compositional analysis of AlGaAs/GaAs heterostructures by the reciprocal space segmentation of high-resolution micrographs
K. Tillmann, M. Luysberg, P. Specht, and E. R. Weber
Ultramicroscopy 93, 123 (2002)

Ab initio prediction of the structure of glide set dislocation cores in GaAs
S.P. Beckmann, X. Xu, P. Specht, E.R. Weber, C. Kisielowski, D.C. Chrzan
J. of Phys. C14, 12673 (2002)

Direct electron beam processing of semiconductor nanostructures
Y. Park, R. Zhao, P. Specht, E.R. Weber
MRS Symp. Proc. 727, 161 (2002)

Nitrogen Incorporation in GaAsN Grown at Low Temperature by Molecular Beam Epitaxy,
R. Zhao, J. Gebauer, P. Specht, H. Feick, E.R. Weber
Proc. of the 4th Symposium on Non-Stoichiometric III-V Compounds, Asilomar, USA, Oct. 2002, edited S. Malzer, T. Marek, P. Kiesel, Physik Mikrostrukturierter Halbleiter vol. 27, University Erlangen (2002), p. 25.

A Standard Low Temperature GaAs Growth - Prerequisite for Defect Engineering
P. Specht, R. Zhao, J. Gebauer, E.R. Weber
Proc. of the 4th Symposium on Non-Stoichiometric III-V Compounds, Asilomar, USA, Oct. 2002, edited S. Malzer, T. Marek, P. Kiesel, Physik Mikrostrukturierter Halbleiter vol. 27, University Erlangen (2002), 31.

Influence of Carbon Doping on the Optical and Electrical Properties of MBE-GaN Grown on MOVPE-GaN/Sapphire Templates
R. Armitage, Q. Yang, H. Feick, S.Y. Tzeng, J. Gebauer, E.R. Weber,
Proc. of the 4th Symposium on Non-Stoichiometric III-V Compounds, Asilomar, USA, Oct. 2002, edited S. Malzer, T. Marek, P. Kiesel, Physik Mikrostrukturierter Halbleiter vol. 27, University Erlangen (2002), 119.

Direct compositional analysis of AlGaAs/GaAs heterostructures by the reciprocal space segmentation of high-resolution micrographs,
K. Tillmann, M. Luysberg, P. Specht, and E. R. Weber
Ultramicroscopy 93, 123 (2002). online

Mechanisms of interdiffusion and thermal stability upon annealing of AlAs/GaAs:Be quantum wells grown under low temperature conditions
K. Tillmann, M. Luysberg, A. Fattah, P. Specht, and E. R. Weber
Proceedings of the Royal Microscopical Society. Microscopy of Semiconducting Materials XII, edited by A. G. H. Cullis, J.L. (IOP Publishing, Bristol, UK, Oxford, UK, 2001), p. 101.

Dopant atom clustering and charge screening induced roughness of electronic interfaces in GaAs p-n multilayers
N. D. Jäger, K. Urban, E. R. Weber, and Ph. Ebert
Phys. Rev. B. 65, 235302 (2002). online

Scanning tunneling microscopy and spectroscopy of semi-insulating GaAs
N. D. Jäger, Ph. Ebert, K. Urban, R. Krause-Rehberg, and E. R. Weber

Phys. Rev. B 65, 195318 (2002). online

In situ diffuse reflectance spectroscopy investigation of low-temperature-grown GaAs
Ri-an Zhao, Michael J. Cich, Petra Specht, and Eicke R. Weber
Appl. Phys. Lett. 80, 2060 (2002). online

Influence of gas transport on the oxidation rate of aluminum arsenide

Cich, M.J.: Zhao, R.; Anderson, E.H.; Weber, E.R.
J. Appl. Phys. 91, 121 (2002). online

2001

Does Beryllium doping suppress the formation of Ga-vacancies in nonstoichiometric GaAs layers grown at low temperatures?
J. Gebauer, R. Zhao, P.Specht, E.R.Weber, F. Redmann, F. Börner, R. Krause-Rehberg, Appl. Phys. Lett. 79, 4313 (2001).
online

“MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source”
A.E. Zhukov, R. Zhao, P. Specht, V.M. Ustinov, A. Anders, E.R. Weber, Semicond. Sci. Technol. 16, 413 (2001)
online

GaAsN-on-GaAs MBE Using a DC Plasma Source
A. E. Zhukov, E. S. Semenova, V. M. Ustinov, E. R. Weber, Technical Physics 46 (2001) 1265-1269 (Zhurnal Tekhnicheskoy Fiziki 71 (2001) 59-64)
online

Pressure dependence of Cu, Ag, and Fe/n-GaAs Schottky barrier heights
Gworek, C.S.; Phatak, P.; Jonker, B.T.; Weber, E.R.; Newman, N., Phys. Rev. B 64, 045322 (2001)
online

MESFETS fabricated on Be-doped low temperature grown GaAs buffer layers
T.R. Weatherford, P. Specht, A.A. Parker, E.R. Weber, Proc. 3rd Symposium on Non-Stoichiometric III-V Compounds, Erlangen, Germany,eds: S. Malzer, T. Marek, P. Kiesel, in Physik Mikrostrukturierter Halbleiter 23, p.13 (2001)

Low temperature MBE grown GaAs gettering of AlAs oxidation induced defects
M.J. Cich, R. Zhao, S. Tzeng, P. Specht, E.R. Weber, Proc. 3rd Symposium on Non-Stoichiometric III-V Compounds, Erlangen, Germany,eds: S. Malzer, T. Marek, P. Kiesel, in Physik Mikrostrukturierter Halbleiter 23, p.43 (2001)

Conductive Non-Stoichiometric III-V Compounds: Properties and Prospective Applications
P. Specht, M.J. Cich, R. Zhao, J. Gebauer, E.R. Weber, Proc. 3rd Symposium on Non-Stoichiometric III-V Compounds, Erlangen, Germany,eds: S. Malzer, T. Marek, P. Kiesel, in Physik Mikrostrukturierter Halbleiter 23, p.73 (2001)

Beryllium dopant induced stabilization against intermixing and precipitation upon annealing of LT-AlAs/GaAs:BE multiplpe quantum wells
K.Tillmann, M. Luysberg, P. Specht, M.J. Cich, E.R. Weber, Proc. 3rd Symposium on Non-Stoichiometric III-V Compounds, Erlangen, Germany,eds: S. Malzer, T. Marek, P. Kiesel, in Physik Mikrostrukturierter Halbleiter 23, p.79 (2001)

“Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates”
D. Lubychev, W.K. Liu, T.R. Stewart, A.B. Cornfeld, X.M. Fang, X. Xu, P. Specht, C. Kisielowski, M. Naidenkova, M.S. Goorsky, C.S. Whelan, E. Hoke, P.F. Marsh, J. Mirecki Millunchick, S.P. Svensson, J. Vac. Sci. & Techn. B19, 1510 (2001)
online

AFM study of lattice matched and strained InGaAsN layers on GaAs
Yeonjoon Park, Michael J. Cich, Rian Zhao, Petra Specht, Henning Feick, Eicke R. Weber, Physica B 308-310, 98 (2001). online

Native point defects in non-stoichiometric GaAs doped with beryllium
J. Gebauer, R. Zhao, P.Specht, F. Redmann, F. Börner, R. Krause-Rehberg, E.R.Weber, Physica B 308-310, 812 (2001). online

Incorporation and thermal stability of defects in highly p-conductive non-stoichiometric GaAs:Be
P. Specht, M.J. Cich, R. Zhao, J. Gebauer, M. Luysberg, E.R. Weber, Physica B 308-310, 808 (2001). online

Interpretation of GaAs(110) scanning tunneling microscopy image contrast by the symmetry of the surface Bloch wave functions
N. D. Jäger, E. R. Weber, M. Salmeron, Journal of Vacuum Science & Technology B19, 511 (2001)
online

Separation of Electron and Hole Dynamics in Low-Temperature grown GaAs
M. Haiml, U. Siegner, F. Morier-Genoud, J. Gebauer, P. Specht, E.R. Weber, U. Keller in: 2000 Int. Semiconducting and Insulating Materials Conference, SIMC-XI, eds.: C. Jagadish and N.J. Welham, IEEE Publ. (2001), p.97.

“Influence of Be Doping on the Structural Properties of Low-Temperature grown GaAs”,
M. Luysberg, P. Specht, E.R. Weber, in: 2000 Int. Semiconducting and Insulating Materials Conference, SIMC-XI, eds.: C. Jagadish, N.J. Welham, IEEE Publ. (2001), p.81.

Defect engeneering in MBE grown GaAs based materials
P. Specht, M.J. Cich, R. Zhao, N.D. Jäger, J. Gebauer, F. Börner, R. Krause-Rehberg, M. Luysberg, E.R. Weber, in: Proceedings 2000 Int. Semiconducting and Insulating Materials Conference, SIMC-XI, eds.: C. Jagadish and N.J. Welham, IEEE Publ. (2001), p.73.

2000

Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4
W.K. Liu, D.I. Lubyshev, P. Specht, R. Zhao, E.R. Weber, J. Gebauer, A. J. SpringThorpe, R. W. Streater, S. Vijarnwannaluk, W. Songprakob, R. Zallen
J. Vacuum Science & Technology B18, 1594 (2000)
online

Analysis of Twin Defects in GaAs(111)B MBE Growth
Y. Park, M.J. Cich, R. Zhao, P. Specht, E.R. Weber, E. Stach, J. Vac. Sci. Technol. B18, 1566 (2000)
online

Defect identification in GaAs grown at low temperatures by positron annihilation
J. Gebauer, F. Börner, R. Krause-Rehberg, T.E.M. Staab, W. Bauer-Kugelmann, G. Koegel, W. Triftshaeuser, P. Specht, R.C. Lutz, E.R. Weber, M. Luysberg
J. Appl. Phys. 87, 8368 (2000)
online

Influence of short-range ordering on roughness of (AlGa)As interfaces studied with cross-sectional scanning tunneling microscopy
T.C.G. Reusch , M. Wenderoth, A. J. Heinrich, K. J. Engel, N. Quaas, K. Sauthoff, R. G. Ulbrich, E. R. Weber, K. Uchida, W. Wegscheider
Appl. Phys. Lett.76, 3882 (2000).

1999

Short-range ordering in AlxGa1 – xAs grown with metal-organic vapor-phase epitaxy
A. J. Heinrich, M. Wenderoth, K. J. Engel, T. C. G. Reusch, K. Sauthoff, and R. G. Ulbrich, E. R. Weber, K. Uchida
Phys. Rev. B 59, 10296 (1999) online

Low temperature ultrahigh vacuum cross-sectional scanning tunneling microscope for luminescence measurements
Yoonho Khang; Yeonjoon Park; Salmeron, M.; Weber, E.R., Review of Scientific Instruments, Dec. 1999, vol.70, (no.12):4595-9
online

Conductive LT-GaAs: The alternative for device applications?,
P. Specht, M.J. Cich, H. Sohn, E.R. Weber, in: Physik Mikrostrukturierter Halbleiter 10, eds.: P. Kiesel, S. Malzer, T. Marek, Erlangen-Nuernberg, 1999, p. 7

Nonlinear optical properties of low-temperature grown semiconductors
U. Siegner, M. Haiml, F. Morier-Genoud, R.C. Lutz, P. Specht, E.R. Weber, U. Keller, in: Physik Mikrostrukturierter Halbleiter 10, eds.: P. Kiesel, S. Malzer, T. Marek, Erlangen-Nuernberg, 1999, p. 33

Electrical Characterization of Beryllium Doped Low Temperature MBE Grown GaAs
M.J. Cich, R. Zhao, Y. Park, P. Specht, E.R. Weber, in: Physik Mikrostrukturierter Halbleiter 10, eds.: P. Kiesel, S. Malzer, T. Marek, Erlangen-Nuernberg, 1999, p. 85

Limitations to epitaxial growth of low-temperature grown GaAs
M. Luysberg, P. Specht, E.R. Weber, in: Physik Mikrostrukturierter Halbleiter 10, eds.: P. Kiesel, S. Malzer, T. Marek, Erlangen-Nuernberg, 1999, p. 97

Structural and Photoluminescence of Er Implanted Be doped and undoped LT-GaAs
R.L. Maltez, Z. Liliental-Weber, J. Washburn, M. Behar, P.B. Klein, P. Specht, E.R. Weber, J. Appl. Phys. 85, 1105 (1999)
online

Femtosecond response times and high optical nonlinearity in Beryllium doped low-temperature grown GaAs
M. Haiml, U. Siegner, F. Morier-Genoud, U. Keller, M. Luysberg, P. Specht, E.R. Weber, Appl. Phys. Lett. 74, 1269 (1999)
online

Optical nonlinearity in low-temperature grown GaAs: microscopic limitations and optimization strategies
M. Haiml, U. Siegner, F. Morier-Genoud, U. Keller, M. Luysberg, R.C. Lutz, P. Specht, E.R. Weber, Appl. Phys. Lett. 74, 3134 (1999)
online

Properties of C-doped LT-GaAs grown by MBE using CBr4
W.K. Liu, K. Bacher, E.R. Weber, P. Specht, F.J. Towner, T.R. Stewart, J. of Cryst. Growth 201/202, 217 (1999)
online

Improvement of MBE-grown LT-GaAs through p-doping with Be and C
P. Specht, R.C. Lutz, R. Zhao, E.R. Weber, W.K. Liu, K. Bacher, F.J. Towner, T.R. Stewart, M. Luysberg, J. Vac. Sci. Technol. B17, 1200 (1999)
online

Change of electrical and structural properties of non-stoichiometric GaAs through Be doping
M. Luysberg, P. Specht, K. Thul, Z. Liliental-Weber, E.R. Weber, in: IEEE conference on semiconducting and insulating materials SIMC-X, Berkeley CA, June 1998, eds. Z. Liliental-Weber & C. Miner, (1999), p.87

Electrical properties and thermal stability of Be-doped non-stoichiometric GaAs
R.C. Lutz, P. Specht, R. Zhao, E.R. Weber, in: IEEE conference on semiconducting and insulating materials SIMC-X, Berkeley CA, June 1998, eds. Z. Liliental-Weber & C. Miner, (1999), p.113

Vacancies in low-temperature-grown GaAs: Observations by positron annihilation
J. Gebauer, F. Boerner, R. Krause-Rehberg, P. Specht, E.R. Weber, in: IEEE conference on semiconducting and insulating materials SIMC-X, Berkeley CA, June 1998, eds. Z. Liliental-Weber & C. Miner, (1999), p.118

Structural and photoluminescence analysis of Er implanted LT-GaAs
R.L. Maltez, Z. Liliental-Weber, J. Washburn, M. Behar, P.B. Klein, P. Specht, E.R. Weber, in: IEEE conference on semiconducting and insulating materials SIMC-X, Berkeley CA, June 1998, eds. Z. Liliental-Weber & C. Miner, (1999), p.122

Time-resolved reflectivity measurement of thermally stabilized As-rich GaAs
R. Zhao, P. Specht, R. Lutz, E.R. Weber, S. Jeong, J. Bokor, in: IEEE conference on semiconducting and insulating materials SIMC-X, Berkeley CA, June 1998, eds. Z. Liliental-Weber & C. Miner, (1999), p.130

Native point defect analysis in non-stoichiometric GaAs: An annealing study
R.C. Lutz, P. Specht, O.H. Lam, R. Zhao, E.R. Weber, J. Gebauer, R. Krause-Rehberg, Physica B 274, 722 (1999)
online

Femtosecond nonlinear optics of low-temperature grown semiconductors
U. Siegner, M. Haiml, F. Morier-Genoud, U. Keller, M. Luysberg, R.C. Lutz, P. Specht, E.R. Weber, Physica B 274, 733 (1999)
online

Electrical Characterization of Beryllium Doped Low Temperature MBE Grown GaAs
M.J. Cich, R.C. Lutz, R. Zhao, P. Specht, E.R. Weber, MRS Symp. Proc. 570, 129 (1999)

1998

Growth and Characterization of p-doped LT-GaAs
P. Specht, R.C. Lutz, R. Zhao, E.R. Weber, in: Physik Mikrostrukturierter Halbleiter 6, eds.: T. Marek, S. Malzer, P. Kiesel, Erlangen-Nuernberg 1998, p.15

Formation of As precipitates in Be-doped non-stoichiometric GaAs and their influence on the electrical properties
M. Luysberg, K. Thul, K. Urban, P. Specht, E.R. Weber, Z. Liliental-Weber, in: Physik Mikrostrukturierter Halbleiter 6, eds.: T. Marek, S. Malzer, P. Kiesel, Erlangen-Nuernberg 1998, p.23 Defect engineering of low-temperature grown gallium arsenid for applications in ultrafast optics,

M. Haiml, U. Siegner, F. Morier-Genoud, U. Keller, M. Luysberg, P. Specht, E.R. Weber, in: Physik Mikrostrukturierter Halbleiter 6, eds.: T. Marek, S. Malzer, P. Kiesel, Erlangen-Nuernberg 1998, p.79

Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low-temperature grown GaAs
M. Luysberg, H. Sohn, A. Prasad, P. Specht, Z. Liliental-Weber, E.R. Weber, J. Gebauer, R. Krause-Rehberg, J. Appl. Phys. 83, 561 (1998)
online

Transmission electron microscopy and photoluminescence studies of Er implanted LT-GaAs:Be
R.L. Maltez, Z. Liliental-Weber, J. Washburn, M. Behar, P.B. Klein, P. Specht, E.R. Weber, Appl. Phys. Lett. 73, 2170,( 1998)
online

Thermal stabilization of non-stoichiometric GaAs through beryllium doping
R.C. Lutz, P. Specht, R. Zhao, S. Jeong, J. Bokor, E.R. Weber, MRS Symp. Proc. 510, 55 (1998)

Structural and photoluminescence studies of Er implanted LT-GaAs,
R.L. Maltez, Z. Liliental-Weber, J. Washburn, P. Specht, E.R. Weber, M. Behar, P.B. Klein, MRS Symp. Proc. 510, 319 (1998)

Origin of the magnetic circular dichroism of absorption of the arsenic antisite in GaAs and AlxGa1-xAs
A. Prasad, P. Stallinga, X. Liu, and E. R. Weber, Phys. Rev. B 57, R4214 (1998)
online

1997

Defect control in As-rich GaAs
P. Specht, S. Jeong, H. Sohn, M. Luysberg, A. Prasad, J. Gebauer, R. Krause-Rehberg, E.R. Weber, in: Proc. of the International Conference of Defects in Semiconductors ICDS19, Aveiro, Portugal, July 1997. Mater. Sci. Forum 258-263, 951 (1997)
DOWNLOAD (488K)

Vacancy defects in low-temperature-grown GaAs observed by continuous and pulsed slow positrons
J. Gebauer, R. Krause-Rehberg, S. Eichler, W. Bauer-Kugelmann, G. Koegel, W. Trifftshaeuser, M. Luysberg, H. Sohn, E.R. Weber, Proc. of the Int. Conf. on Defects in Semiconductors ICDS19, July 1997, Aveiro, Portugal, Mater. Sci. Forum 255-257,204 (1997)

Electrical and structural properties of LT-GaAs: Influence of As/Ga flux ratio and growth temperature
M. Luysberg, H. Sohn, A. Prasad, P. Specht, H. Fujioka, R. Klockenbrink, E.R. Weber, Mat. Res. Soc. Symp. Proc. 442, 485 (1997)

Ga vacancies in low-temperature-grown GaAs identified by slow positrons
J. Gebauer, R. Krause-Rehberg, S. Eichler, M. Luysberg, H. Sohn, E.R. Weber, Appl. Phys. Lett. 71, 638 (1997)
online

Effects of GaAs thickness on ordering and size of vertically coupled InAs dots embedded in GaAs layers
S. Ruvimov, Z. Liliental-Weber, J. Washburn, E. R. Weber, A. Sasaki, A. Wakahara, T. Abe and S. Noda, Proc. Spring `97 MRS Meeting, San Francisco (1997).

1996

The influence of native point defects on the performance of diodes built on semi-insulating GaAs
J. Kruger et al., Proc. IEEE SIMC-9, Proc. Semi-Insulating and Semiconducting Materials Conference, Toulouse, 1996.
DOWNLOAD (98K)

Scanning tunneling microscopy of the GaAs(100) surface at low bias
N. D. Jäger, X. Liu, J. F. Zheng, N. Newman, D. F. Ogletree, E. R. Weber, and M. Salmeron, Scanning tunneling microscopy of the GaAs (110) surface at low bias, in 23rd International Conference on the Physics of Semiconductors; Vol. 2, edited by M. Scheffler and R. Zimmermann (World Scientific, Berlin, Germany, 1996), p. 847-50

Electrical characterization of low-temperature Al0.3Ga0.7As using n-i-n structures
A.K. Verma, J. Tu, J.S. Smith, H. Fujioka, E.R. Weber, Appl. Phys. Lett. 68, 699 (1996)
online

Control of stoichiometry dependent defects in low temperature GaAs
M. Luysberg, H. Sohn, A. Prasad, H. Fujioka, R. Klockenbrink, E.R. Weber, in: Semiconducting and Insulating Materials 1996, Ed.: C. Fontaine, IEEE (1996), p.21

Quantitative HRTEM: a step towards application oriented basic research
C. Kisielowski, Z. Liliental-Weber and E.R. Weber, Brazilian Journal of Physics 26, 83 (1996)

High resistivity and ultrafast carrier lifetime in argon implanted GaAs
W. Walukiewicz, Z. Liliental-Weber, J. Jasinski, M. Almonte, E.E. Haller, A. Prasad, E.R. Weber, K. Wang, J. Whitaker, Appl. Phys. Lett. 69, 2569 (1996)
online



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Last revised: 04/23/03

 

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