Publications & Proceedings
2009
Structural, magnetic, and transport properties of laser-annealed GaAs:Mn-H
J. Appl. Phys. 106, 013904 (2009)
2008
Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting
J. Appl. Phys. 103, 073913 (2008)
Nonmagnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting
J. Appl. Phys. 103, 123906 (2008)
Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing
Phys. Rev. B 78, 075201 (2008)
Metal-Insulator Transition by Isovalent Anion Substitution in Ga1-xMnxAs: Implications to Ferromagnetism
Phys. Rev. Lett. 101, 087203 (2008)
Compensation-dependent in-plane magnetization reversal processes in Ga1-xMnxP1-ySy
Phys. Rev. B 78, 214421 (2008)
Anticrossing in Highly Mismatched SnxGe1-x Semiconducting Alloys
Phys. Rev. B 77, 073202 (2008)
Ge Island Assembly on Metal-Patterned Si: Truncated Pyramids, Nanorods, and Beyond
J. Nanoscience and Nanotechnology 8, 56 (2008)
Laser activation of ferromagnetism in hydrogenated Ga1-xMnxAs
Appl. Phys. Lett. 92, 012517 (2008)
2007
Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors
Physica B 401, 454 (2007)
Hydrogen patterning of Ga1-xMnxAs for planar spintronics
Physica B 401, 447 (2007)
Gold-catalyzed oxide nanopatterns for the directed assembly of Ge island arrays on Si
Nano Letters 7, 2655 (2007)
Chemical Nanomachining of Si by Au-catalyzed oxidation
Nano Letters 7, 2009 (2007)
Magnetocrystalline anisotropy and magnetization reversal in Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting
Phys. Rev. B 75, 214419 (2007)
Determination of infrared complex magneto-conductivity tensor from Faraday and Kerr measurements
Phys. Rev. B 75, 214416 (2007)
Valence band anticrossing in GaBixAs1-x alloys
Appl. Phys. Lett. 75, 051909 (2007)
Valence-band anticrossing in mismatched III-V semiconductor alloys
Phys. Rev. B 75, 045203 (2007)
Sculpting semiconductor heteroepitaxial islands: from dots to rods
Phys. Rev. Lett. 98, 106102 (2007)
2D-patterned ferromagnetic III-Mn-V semiconductors for planar spintronics
Phys. Status Solidi C 4, 1755 (2007)
Valence band anticrossing in mismatched III-V semiconductor alloys
Phys. Status Solidi C 4, 1711 (2007)
2006
Metallization and oxidation templating of surfaces for directed island assembly
Springer Series on Nanoscience & Technology: Lateral Alignment of Epitaxial Quantum Dots 4, Eds. O.G. Schmidt, P. Avouris, K.v. Klitzing, H. Sakaki, and R. Wiesendanger,
in press (2006).
Mn L3,2 X-ray absorption and magnetic circular dichroism in ferromagnetic Ga1-xMnxP
Appl. Phys. Lett. 89, 012504 (2006)
Mn L3,2 X-ray absorption spectroscopy and magnetic circular dichroism in ferromagnetic
Ga1-xMnxP
Ga1-xMnxP
AIP Conf. Proc. 893, 1177 (2007)
Magnetic cluster phases of Mn-interstitial-free (Ga,Mn)As
AIP Conf. Proc. 893, 1221 (2007)
Programming the Shape of Highly Ordered Ge Islands on Si: from Dots to Rods
AIP Conf. Proc. 893, 37 (2007)
Morphological evolution of Ge islands on Au-patterned Si
J. Cryst. Growth 287, 518 (2006)
Ordering and shape tuning of Ge islands on metal-patterned Si
Mat. Res. Soc. Symp. Proc. 958, L03-07 (2007)
A Chemical Approach to 3-D Lithographic Patterning of Si and Ge Nanocrystals
Mat. Res. Soc. Symp. Proc. 901, Rb09-03 (2006)
Compositional tuning of ferromagnetism in Ga1-xMnxP
Solid State Commun. 140, 443 (2006)
Doping and defect control of ferromagnetic semiconductors formed by ion implantation and pulsed-laser melting
Physica B 376, 630 (2006)
2005
Diluted semiconductors formed from energetic beams
IOP Conference Series 184, 399 (2005)
Metal-Induced Assembly of a Semiconductor Island Lattice: Ge Truncated Pyramids on
Au-Patterned Si
Au-Patterned Si
Nano Letters 5, 2070 (2005)
Ferromagnetism in Ga1-xMnxP: Evidence for inter-Mn exchange mediated by localized holes within a detached impurity band
Phys. Rev. Lett. 95, 207204 (2005)
Effect of film thickness on the incorporation of Mn interstitials in Ga1-xMnxAs
Appl. Phys. Lett. 86, 042102 (2005)
Directed assembly of Ge islands grown on Au-patterned Si(100)
AIP Conf. Proc 772, 609 (2005)
Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning
AIP Conf. Proc 772, 223 (2005)
Carrier Concentration Dependencies of Magnetization Transport in Ga1-xMnxAs1-yTey
AIP Conf. Proc 772, 1367 (2005)
2004
Synthesis and properties of highly mismatched II-O-VI alloys
IEE Proc.-Optoelectronics 151, 452 (2004)
Synthesis and properties of highly mismatched II-O-VI alloys
J. Appl. Phys. 95, 6232 (2004)
Diluted ZnMnTe oxide: a multi-band semiconductor for high efficiency solar cells
Phys. Status Solidi B 241, 660 (2004)
Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloys
Appl. Phys. Lett. 84, 924 (2004)
2003
Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1-x alloys
Physica B 340, 389 (2003)
Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting
Physica B 340, 908 (2003)
Diluted II-VI Oxide Semiconductors with Multiple Band Gaps
Phys. Rev. Lett. 91, 246403 (2003)
Mutual passivation of group IV donors and nitrogen in diluted GaNxAs1-x alloys
Appl. Phys. Lett. 83, 2844 (2004)
Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of
N+-implanted GaAs
N+-implanted GaAs
J. Appl. Phys. 94, 1043 (2003)
Ferromagnetic Ga1-xMnxAs produced by ion implantation and pulsed-laser melting
Appl. Phys. Lett. 82, 1251 (2003)
2002
Mutual passivation of electrically active and isovalent impurities
Nature Mater. 1, 185 (2002)
Enhanced nitrogen incorporation by pulsed laser annealing of GaNxAs1-x formed by N ion implantation
Appl. Phys. Lett. 80, 3958 (2002)

