Advanced Semiconductor Research

Our research seeks to address outstanding problems in semiconductor science and technology. To this end our group pursues investigations in the areas of semiconductor spintronics, scalable directed assembly, and nanofabrication. Our efforts combine both materials synthesis and characterization, applying advanced growth and processing methods in combination with a broad suite of materials analysis techniques. Activities within our group include the growth of semiconductor nanostructure arrays by molecular beam epitaxy and the synthesis of ferromagnetic semiconductors by ion implantation and pulsed-laser melting.

We are affiliated with the Department of Materials Science and Engineering at the University of California, Berkeley, and the Materials Science Division at Lawrence Berkeley National Laboratory.

Research Highlights

Coming soon!

Recent Papers

Here are some recent papers. More

M.A. Scarpulla, R. Farshchi, P.R. Stone, R.V. Chopdekar, K.M. Yu, Y. Suzuki, and O.D. Dubon
Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting
J. Appl. Phys. 103, 073913 (2008)
M.A. Scarpulla, P.R. Stone, I.D. Sharp, E.E. Haller, O.D. Dubon, J.W. Beeman, and K.M. Yu
Nonmagnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting
J. Appl. Phys. 103, 123906 (2008)
K. Alberi, K.M. Yu, P.R. Stone, O.D. Dubon, W. Walukiewicz, T. Wojtowicz, X. Liu, and J. Furdyna
Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing
Phys. Rev. B 78, 075201 (2008)