Major Current Projects

• Laser Lift-off & Film Transfer
• Assembly of Fluorescence-based Bioanalytical Microdevices
• Nanostructured Thermoelectric Materials
• Piezoelectric Microactuators for the Micromechanical Flying Insect

• Low-thermal-budget Ferroelectric Thin Films on Silicon (1994-98)
• MnCrBi Thin-Films for Magneto-optic Recording at Blue Wavelengths (1994-99)
• Epitaxial Ferroelectric Heterostructures (1991-94)
• High-Temperature Superconducting Thin Films (1991-94)
• Epitaxial Ferromagnetic Films on III-V Semiconductors (1990-93)
• Metal/Compound Semiconductor Heteroepitaxy (1988-93)
• Stable Non-spiking Ohmic Contacts to Compound Semiconductors (1988-92)
• Reactions with Compound Semiconductors (1982-88)
• Ion Implantation in Semiconductors (1984-87)

Other Current Projects

Integrated ultrasonic particle separation for microflumes

Epitaxial ferroelectric field-effect transistors

• W. Choi, T. Sands and K.-Y. Kim, "Epitaxial Growth of Semiconducting LaVO3 Thin Films," J. Mater. Res. Rapid Communications, 15 (2000) pp. 1-3.

Magnetic thin-film growth; exchange interactions in magnetic thin films and nanostructures

Pulsed Laser Interactions with Transparent Media

• A. Salleo, T. Sands and F.Y. Génin, "Machining of Transparent Materials using IR and UV Nanosecond pulsed laser," Applied Physics A – Materials Science and Processing 71 (2000) pp. 601-608.
• A. Salleo. F.Y. Génin, M.D. Feit, A.M. Rubenchik, T. Sands, S.S. Mao and R.E. Russo, "Energy deposition at front and rear surfaces during picosecond laser interaction with fused silica," Appl. Phys. Lett. 78 (2001) pp. 2840-2.

Project Archive

Low-thermal-budget Ferroelectric Thin Films on Silicon (1994-98)

• J. Bandaru, T. Sands and L. Tsakalakos, "A Simple Ru Electrode Scheme for Ferroelectric (Pb,La)(Zr,Ti)O3 Capacitors Directly on Silicon," J. Appl. Phys. 84 (1998) pp. 1121-1125.

MnCrBi Thin-Films for Magneto-optic Recording at Blue Wavelengths (1994-99)

• P.R. Bandaru, T. Sands, Y. Kubota and E. Marinero, "Decoupling the Structural and Magnetic Phase Transformations in Magneto-Optic MnBi Thin Films by the Partial Substitution fo Cr for Mn," Appl. Phys. Lett. 72 (1998) pp.2337-2339.
• P.R. Bandaru, T. Sands, D. Weller and E.E. Marinero, "Magneto-optical Properties of Chromium-alloyed Manganese Bismuth Thin Films," J. Appl. Phys. 86 (1999)1596-1603.

Epitaxial Ferroelectric Heterostructures (1991-1994)

• R. Ramesh, A. Inam, B. J. Wilkens, W. K. Chan, T. Sands, J. M. Tarascon, D. K. Fork, T. H. Geballe, J. Evans and J. Bullington, "Epitaxial Ferroelectric Bismuth Titanate/Superconductor (Y-Ba-Cu-O) Thin Film Heterostructures on Silicon," Appl. Phys. Lett. 59 (1991) 1782.
• R. Ramesh, A. Inam, W. K. Chan, F. Tillerot, B. J. Wilkens, C. C. Chang, T. Sands and J. M. Tarascon, "Ferroelectric PbZr0.2Ti0.8O3 Thin Films on Epitaxial Y-Ba-Cu-O," Appl. Phys. Lett. 59, (1991) 3542.
• R. Ramesh, W. K. Chan, B. Wilkens, A. Inam, F. Tillerot, T. D. Sands, J. M. Tarascon and V. G. Keramidas, "Structure and Properties of Ferroelectric PbZr0.2Ti0.8O3/YBa2Cu3O7 Heterostructures," J. Electronic Mater. 21, (1992) 513.
• R. Ramesh, W. K. Chan, B. Wilkens, T. Sands, J. M. Tarascon, V. G. Keramidas and J. T. Evans, Jr., "Fatigue and Aging in Ferroelectric PbZr0.2Ti0.8O3/YBa2Cu3O7 Heterostructures", Integrated Ferroelectrics 1 (1992) 1.
• R. Ramesh, A. Inam, W. K. Chan, B. J. Wilkens, F. Tillerot, T. Sands, J.-M. Tarascon, J. Bullington and J. Evans, "Ferroelectric PbZr0.2Ti0.8O3 Thin Films on Epitaxial Y-Ba-Cu-O," Integrated Ferroelectrics 1 (1992) 205.
• R. Ramesh, W. K. Chan, B. J. Wilkens, H. L. Gilchrist, T. Sands, J. M. Tarascon, V. G. Keramidas, D. K. Fork, J. J. Lee and A. Safari, "Fatigue and Retention in Ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O Heterostructures," Appl. Phys. Lett. 61 (1992) 1537.
• D. H. Reitze, E. Haton, R. Ramesh, S. Etemad, D. E. Leaird, T. Sands, Z. Karim and A. Tanguay, "Electro-optic Properties of Single Crystalline, Ferroelectric Thin Films," Appl. Phys. Lett. 63 (1993) 596.
• J. Lee, L. Johnson, A. Safari, R. Ramesh, T. Sands, H. Gilchrist and V. G. Keramidas, "Effects of Crystalline Quality and Electrode Material on Fatigue in Pb(Zr,Ti)O3 Thin Film Capacitors," Appl. Phys. Lett. 63 (1993) 27.
• R. Ramesh, H. Gilchrist, T. Sands, V. G. Keramidas, R. Haakenaasen and D. K. Fork, "Ferroelectric La-Sr-Co-O/Pb-Zr-Ti-O/La-Sr-Co-O Heterostructures on Silicon via Template Growth," Appl. Phys. Lett. 63 (1993) 3592.
• S. Yilmaz, R. Gerhard-Multhaupt, W. A. Bonner, D. M. Hwang, A. Inam, J. A. Martinez, T. S. Ravi, T. D. Sands, B. J. Wilkens, X. D. Wu and T. Venkatesan, "Electro-optic Potassium-tantalate-niobate Films Prepared by Pulsed Laser Deposition from Segmented Pellets," J. Mater. Res., 9 (1994) 1272.
• R. Ramesh, T. Sands and V. G. Keramidas, "Effect of Crystallographic Orientation on Ferroelectric Properties of PbZr0.2Ti0.8O3 Thin Films," Appl. Phys. Lett. 63 (1993) 731.
• S. G. Ghonge, E. Goo, R. Ramesh, T. Sands and V. G. Keramidas, "Microstructure of Epitaxial La0.5Sr0.5CoO3 (LSCO) / Ferroelectric Pb0.9La0.1(Zr0.2Ti0.8)0.975O3 (PLZT) / La0.5Sr0.5CoO3 (LSCO) Heterostructures on LaAlO3," Appl. Phys. Lett. 63 (1993) 1628.
• S. G. Ghonge, E. Goo, R. Ramesh, T. Sands, and V. G. Keramidas, "Microstructure of Epitaxial Ferroelectric YBa2Cu3O7-x / Pb0.9La0.1(Zr0.2Ti0.8)0.975//YBa2Cu3O7-x Heterostructures on LaAlO3", J. Amer. Ceram. Soc. 76 (1993) 3141.
• V. R. Iyer, E. P. Kvam, D. L. Perry, R. Ramesh, T. D. Sands and V. Keramidas, "Oriented Growth in Oxide Thin Film Heterostructures,"..Scripta Metall. et Mater. 29 (1993) 885.
• R. Ramesh, T. Sands, and V. G. Keramidas, "Template Approaches to Growth of Oriented Oxide Heterostructures on SiO2/Si", J. Electronic Mater. 23 (1994) 19.
• R. Ramesh, J. Lee, T. Sands, V. G. Keramidas and O. Auciello, "Oriented Ferroelectric LSCO/PLZT/LSCO Heterostructures on [001] Pt/SiO2/Si Substrates using a Bismuth Titanate Template Layer," Appl. Phys. Lett. 64 (1994) 2511.
• R. Ramesh, B. Dutta, T. S. Ravi, J. Lee, T. Sands and V. G. Keramidas, "Scaling of Ferroelectric Properties in LSCO/PLZT/LSCO Capacitors", Appl. Phys. Lett. 64 (1994) 1588.
• R. Ramesh, T. Sands, V. G. Keramidas, and D. K. Fork, Epitaxial Ferroelectric Thin Films for Memory Applications, Materials Sci. & Engin. B- Solid State Mater. for Adv. Tech. 22 (1994) 283.

High-Temperature Superconducting Thin Films (1991-94)

• U. S. Patent No. 5,145,832; "Superconducting Film on a Flexible Two-Layer Zirconia Substrate," K. S. Harshavardhan, S. Sampere, T. D. Sands, and T. Venkatesan, issued Sept. 8, 1992.
• R. Ramesh, A. Inam, D. M. Hwang, T. Sands, C. C. Chang and D. L. Hart, "The Surface Outgrowth Problem in c-axis Oriented Y-Ba-Cu-O Thin Films," Appl. Phys. Lett. 58 (1991) 1557.
• K. S. Harshavardhan, R. Ramesh, T. S. Ravi, S. Sampere, A. Inam, C. C. Chang, G. Hull, T. Sands, T. Venkatesan, M. Reeves and J. E. Tkaczyk, "YBCO Films on Flexible, Partially Stabilized Zirconia Substrates with Fully Stabilized Zirconia Buffer Layers," Appl. Phys. Lett. 59 (1991) 1638; (TM-ARH-018607).
• R. Ramesh, A. Inam, D. M. Hwang, T. S. Ravi, T. Sands, X. X. Xi, X. D. Wu, Q. Li, T. Venkatesan and R. Kilaas, "The Atomic Structure of Growth Interfaces in Y-Ba-Cu-O Thin Films," J. Mater. Res. 6 (1991) 2264.
• K. S. Harshavardhan, M. Rajeswari, D. M. Hwang, C. Y. Chen, T. Sands, T. Venkatesan, J. E. Tkaczyk, K. W. Lay and A. Safari, "Dominant Pinning Mechanisms in YBa2Cu3O7-x Films on Single and Polycrystalline Yttria Stabilized Zirconia Substrates," Appl. Phys. Lett. 60 (1992) 1902.
• Invited- R. Ramesh, A. Inam, T. Sands and C. T. Rogers, "Critical Review: Thin Film Y-Ba-Cu-O High Tc Superconductors: Structure-Property Relationships," Mater. Sci. and Engin. B14 (1992) 188.
• K. S. Harshavardhan, M. Rajeswari, D. M. Hwang, C. Y. Chen, T. Sands and T. Venkatesan, "Comparison of the Critical Current Anisotropy in Epitaxial YBa2Cu3O7-x Films on (100) LaAlO3 and (100) Yttria Stabilized Zirconia," J. Mater. Res. 9 (1994) 270.

Epitaxial Ferromagnetic Films on III-V Semiconductors (1990-93)

• U. S. Patent No. 5,169,485; "Method for the Preparation of Epitaxial Ferromagnetic Manganese Aluminum Magnetic Memory Element," S. J. Allen, Jr., J. P. Harbison, M. L. Leadbeater, R. Ramesh, and T. D. Sands, issued Dec. 8th, 1992.
• T. Sands, J. P. Harbison, M. L. Leadbeater, S. J. Allen, Jr., G. W. Hull, R. Ramesh, and V. G. Keramidas, "Epitaxial Ferromagnetic tMnAl Films on GaAs," Appl. Phys. Lett. 57 (1990) 2609
• M. L. Leadbeater, S. J. Allen, F. DeRosa, J. P. Harbison, T. Sands, R. Ramesh, L. T. Florez, and V. G. Keramidas, "Galvanomagnetic Properties of Epitaxial MnAl Films on GaAs," J. Appl. Phys. 69 (1991) 4689; (TM-ARH-017554).
• J. P. Harbison, T. Sands, R. Ramesh, L. T. Florez, B. J. Wilkens, and V. G. Keramidas, "MBE Growth of Ferromagnetic Metastable Epitaxial MnAl Thin Films on AlAs/GaAs Heterostructures," J. Crystal Growth 111 (1991) 978;(TM-ARH-017851).
• T. L. Cheeks, M. J. S. P. Brasil, T. Sands, J. P. Harbison, D. E. Aspnes, V. G. Keramidas and S. J. Allen, Jr. "Magnetic and Magneto-optic Properties of Epitaxial Ferromagnetic tMnAl/(Al,Ga)As Heterostructures," Appl. Phys. Lett. 60 (1992) 1393; (TM-ARH-020392).
• M. Tanaka, J. P. Harbison, J. De Boeck, T. Sands, B. Philips, T. L. Cheeks and V. G. Keramidas, "Epitaxial Growth of Ferromagnetic Ultrathin MnGa Films with Perpendicular Magnetization on GaAs," Appl. Phys. Lett. 62 (1993) 1565; (IM-BCR-000186)
• J. De Boeck, T. Sands, J. P. Harbison, A. Scherer, H. Gilchrist, T. L. Cheeks, M. Tanaka and V. G. Keramidas, "Non-Volatile Memory Characteristics of Submicrometre Hall Structures Fabricated in Epitaxial Ferromagnetic MnAl on GaAs," Electronics Letters 29 (1993) 421.
• M. Tanaka, J. P. Harbison, T. Sands, B. Philips, T. L. Cheeks, J. De Boeck, L. T. Florez and V. G. Keramidas, "Epitaxial MnGa/NiGa Multilayers on GaAs," Appl. Phys. Lett. 63 (1993) 696.
• J. P. Harbison, T. Sands, J. De Boeck, T. L. Cheeks, P. Miceli, M. Tanaka, L. T. Florez, B. J. Wilkens, H. L. Gilchrist and V. G. Keramidas, "MBE Growth of Ferromagnetic (Mn,Ni)Al Thin Films on AlAs/GaAs," J. Crystal Growth 127 (1993) 650; (IM-BCR-000243).
• M. Tanaka, J. P. Harbison, T. Sands, T. L. Cheeks, J. De Boeck, D. M. Hwang, L. T. Florez and V. G. Keramidas, "Epitaxial tMnAl/NiAl Magnetic Multilayers on AlAs/GaAs," Appl. Phys. Lett. 63 (1993) 839.
• M. Tanaka, J. P. Harbison, T. Sands, T. L. Cheeks, V. G. Keramidas and G. M. Rothberg, "MBE Growth of MnAs Thin Films on GaAs," J. Vacuum Sci. and Technol. , B 12 (1993) 1091.

Metal/Compound Semiconductor Heteroepitaxy (1988-93)

• U. S. Patent No. 5,016,074; "Epitaxial Intermetallic Contact for Compound Semiconductors,"(Epitaxial Permeable Base Transistor) Timothy D. Sands, issued May 14th, 1991.
• U. S. Patent No. 5,051,792; "Epitaxial Intermetallic Contact for Compound Semiconductors," (Epitaxial Gate Field-Effect Transistor) Timothy D. Sands, issued Sept. 24th, 1991.
• U. S. Patent No. 5,075,755; "Epitaxial Intermetallic Contact for Compound Semiconductors," (Transition metal aluminides with B2 structure) Timothy D. Sands, issued Dec. 24th, 1991.
• T. Sands, "Stability and Epitaxy of NiAl and Related Intermetallic Films on III-V Compound Semiconductors," Appl. Phys. Lett. 52 (1988) 197; (TM-ARH-010392).
• T. Sands, W. K. Chan, C. C. Chang, E. W. Chase and V. G. Keramidas, "NiAl/n-GaAs Schottky Diodes: Barrier Height Enhancement by High-Temperature Annealing," Appl. Phys. Lett. 52 (1988) 1338; (TM-ARH-010820).
• T. Sands, J. P. Harbison, W. K. Chan, S. A. Schwarz, C. C. Chang, C. J. Palmstrøm and V. G. Keramidas, "Epitaxial Growth of GaAs/NiAl/GaAs Heterostructures," Appl. Phys. Lett. 52, 1216 (1988); (TM-ARH-010684).
• J. P. Harbison, T. Sands, N. Tabatabaie, W. K. Chan, L. T. Florez and V. G. Keramidas, "Molecular Beam Epitaxial Growth of Ultrathin Buried Metal Layers: (Al,Ga)As/NiAl/(Al,Ga)As Heterostructures," Appl. Phys. Lett. 53, 1717 (1988); (TM-ARH-012078).
• N. Tabatabaie, T. Sands, J. P. Harbison, H. L. Gilchrist and V. G. Keramidas, "Negative Differential Resistance in AlAs/NiAl/AlAs Heterostructures: Evidence for Size Quantization in Metals," Appl. Phys. Lett. 53 (1988) 2528; (TM-ARH-012257).
• J. P. Harbison, T. Sands, N. Tabatabaie, W. K. Chan, L. T. Florez, and V. G. Keramidas, "MBE Growth of AlGaAs/NiAl/AlGaAs Heterostructures: A Novel Epitaxial III-V Semiconductor/Metal System, J. Crystal Growth 95 (1989) 425 ; (TM-ARH-012077).
• C. J. Palmstrøm, K. C. Garrison, S. Mounier, T. Sands, C. L. Schwartz, N. Tabatabaie, S. J. Allen, Jr., H. L. Gilchrist, and P. F. Miceli, "Growth of Epitaxial Rare-Earth Arsenide/(100) GaAs and GaAs/Rare-Earth Arsenide/(100) GaAs Structures," J. Vac. Sci. Technol. B 7, (1989) 747; (TM-ARH-015067).
• C. J. Palmstrøm, K. C. Garrison, B. O. Fimland, T. Sands and R. A. Bartynski, "Epitaxial CoGa and Textured CoAs Contacts to Ga1-xAlxAs Fabricated by Molecular Beam Epitaxy," J. Appl. Phys. 65 (1989) 4753; (TM-ARH-013153).
• S. J. Allen, Jr., N. Tabatabaie, C. J. Palmstrøm, G. W. Hull, T. Sands, F. DeRosa, H. L. Gilchrist, and K. C. Garrison, "ErAs Epitaxial Layers Buried in GaAs: Magneto-transport and Spin Disorder Scattering," Phys. Rev. Lett. 62 (1989) 2309; (TM-ARH-013497).
• N. Tabatabaie, T. Sands, J. P. Harbison, H. L. Gilchrist, L. T. Florez and V. G. Keramidas, "Electrical Resistivity of Thin Epitaxial NiAl Buried in (Al,Ga)As," Appl. Phys. Lett. 54 (1989) 2112; (TM-ARH-013509).
• S. J. Allen, Jr., N. Tabatabaie, C. J. Palmstrøm, S. Mounier, G. W. Hull, T. Sands, F. DeRosa, H. L. Gilchrist and K. C. Garrison, "Magneto-transport in Ultrathin ErAs layers Buried in GaAs," Surface Science 228, (1990) 13; (TM-ARH-014288).
• T. L. Cheeks, T. Sands, R. Nahory, J. P. Harbison, N. Tabatabaie, H. L. Gilchrist, B. J. Wilkens, and V. G. Keramidas, "Electrical and Optical Characterization of Back-to-Back Schottky (Al,Ga)As/NiAl/(Al,Ga)As Molecular Beam Epitaxially Grown Double Heterostructure Diodes," Appl. Phys. Lett. 56, 1043 (1990); (TM-ARH-014922).
• Invited- T. Sands, J. P. Harbison, N. Tabatabaie, W. K. Chan, H. L. Gilchrist, T. L. Cheeks, L. T. Florez and V. G. Keramidas, "Epitaxial Metal (NiAl)- Semiconductor (III-V) Heterostructures by MBE," Surface Science 228 (1990) 1; (TM-ARH-014739).
• Invited- T. Sands, J. P. Harbison, R. Ramesh, C. J. Palmstrøm, L. T. Florez and V. G. Keramidas, "Interface Crystallography and Stability in Epitaxial Metal (NiAl,CoAl)/III-V Semiconductor Heterostructures," Mater. Sci. and Engin. B6 (1990) 147; (TM-ARH-015425).
• Invited- T. Sands, C. J. Palmstrøm, J. P. Harbison, V. G. Keramidas, N. Tabatabaie, T. L. Cheeks, R. Ramesh, and Y. Silberberg, "Stable and Epitaxial Metal/III-V Semiconductor Heterostructures," Materials Science Reports 5, (1990) 98-170; (TM-ARH-016940).
• T. L. Cheeks, R. E. Nahory, T. Sands, J. Harbison, H. L. Gilchrist and V. G. Keramidas, "Design of Epitaxial Metal/AlAs/GaAs Structures for Enhancement of Schottky Barrier Heights," J. Electron. Mater. 20 (1991) 881.
• Y. Silberberg and T. Sands, "Optical Properties of Metallic Quantum Wells," IEEE J. of Quantum Electronics 28, (1992) 1663; (TM-ARH-017670).
• Invited- T. Sands, "Nanoscale Engineering of Metal/Semiconductor Interfaces," J. of The Minerals, Metals and Materials Society (JOM), February 1993, p. 61.

Stable Non-spiking Ohmic Contacts to Compound Semiconductors (1988-92)

• U. S. Patent No. 5,045,502; "PdIn Ohmic Contact to GaAs," S. S. Lau, T. D. Sands and L. C. Wang, issued September 3rd, 1991.
• T. Sands, E. D. Marshall and L. C. Wang, "Solid-Phase Regrowth of Compound Semiconductors by Reaction-Driven Decomposition of Intermediate Phases," J. Mater. Res. 3 (1988) 914; (TM-ARH-010795).
• L. C. Wang, B. Zhang, F. Fang, E. D. Marshall, S. S. Lau, T. Sands and T. F. Kuech, "An Investigation of a Non-Spiking Ohmic Contact to n-GaAs Using the Si/Pd System," J. Mater. Res. 3, 922 (1988); (TM-ARH-011491).
• S. A. Schwarz, C. J. Palmstrøm, C. L. Schwartz, T. Sands, L. G. Shantharama, J. P. Harbison, L. T. Florez, E. D. Marshall, C. C. Han, S. S. Lau, L. H. Allen, and J. W. Mayer, "Backside Secondary Ion Mass Spectrometry Investigation of Ohmic and Schottky Contacts on GaAs, J. Vac. Sci. Technol. A 8 (1990) 2079; (TM-ARH-014853).
• L. C. Wang, X. Z. Wang, S. S. Lau, T. Sands, W. K. Chan, and T. F. Kuech, "Stable and Shallow PdIn Ohmic Contacts to n-GaAs," Appl. Phys. Lett. 56, 2129 (1990); (TM-ARH-016033).
• L. C. Wang, X. Z. Wang, S. N. Hsu, S. S. Lau, P. S. D. Lin, T. Sands, S. A. Schwarz, D. L. Plumton, and T. F. Kuech, "An Investigation of the Pd-In-Ge Non-Spiking Ohmic Contact to n-GaAs using the TLM, Kelvin and the Cox and Strack Structures," J. Appl. Phys. 69, 4364 (1991); (TM-ARH-018292).
• S. A. Schwarz, M. A. A. Pudensi, T. Sands, T. J. Gmitter, R. Bhat, M. Koza, L. C. Wang and S. S. Lau, "Backside Secondary Ion Mass Spectrometry Study of a Ge/Pd Ohmic Contact to InP," Appl. Phys. Lett. 60, (1991) 1123; (TM-ARH-020299).
• L. C. Wang, Y. Z. Li, M. Kappes, S. S. Lau, D. M. Hwang, S. A. Schwarz and T. Sands, "The Si/Pd(Si,Ge) Ohmic Contact on n-GaAs," Appl. Phys. Lett. 60, (1992) 3016.

Reactions with Compound Semiconductors (1982-88)

• T. D. Sands, J. Washburn and R. Gronsky, "High Resolution Observations of Copper Vacancy Ordering in Chalcocite (Cu2S) and the Transformation to Djurleite (Cu1.94-1.97S)," physica status solidi (a) 72 (1982) 551; (LBL-13746).
• T. Sands, J. Washburn and R. Gronsky, "Interface Morphology and Phase Distribution in the Cu2-xS/CdS Heterojunction: A Transmission Electron Microscope Investigation," Solar Energy Materials 10 (1984) 349; (LBL-17677).
• T. Sands, J. Washburn and R. Gronsky, "Crystallographic Relationships between GaAs, As and Ga2O3 at the GaAs- Thermal Oxide Interface," Materials Lett. 3 (1985) 247; (LBL-18636).
• T. Sands, V. G. Keramidas, R. Gronsky and J. Washburn, "Ternary Phases in the Pd-GaAs System: Implications for Shallow Contacts to GaAs," Materials Lett. 3 (1985) 409; (LBL-19379).
• T. Sands, V. G. Keramidas, R. Gronsky and J. Washburn, "Initial Stages of the Pd-GaAs Reaction: Formation and Decomposition of Ternary Phases," Thin Solid Films 136 (1986) 105; (LBL-19133).
• T. Sands, V. G. Keramidas, J. Washburn and R. Gronsky, "Structure and Composition of NixGaAs," Appl. Phys. Lett. 48, (1986) 402; (LBL-20376).
• J. Ding, J. Washburn, T. Sands and V. G. Keramidas, "In/GaAs Reaction: Effect of an Intervening Native Oxide Layer," Appl. Phys. Lett. 49 (1986) 818; (TM-ARH-008173).
• Invited- T. Sands, "Contacts to Compound Semiconductors," J. of Metals (JOM) 38 (1986) 31; (TM-ARH-002908).
• K-M. Yu, S. K. Cheung, T. Sands, J. M. Jaklevic, N. W. Cheung and E. E. Haller, "Schottky Barrier Degradation of the W/GaAs System after High Temperature Annealing," J. Appl. Phys. 60 (1986) 3235; (TM-ARH-006069).
• T. Sands, V. G. Keramidas, A. J. Yu, K. M. Yu, R. Gronsky and J. Washburn, "Ni, Pd and Pt on GaAs: A Comparative Study of Interfacial Structures, Compositions and Reacted Film Morphologies," J. Mater. Res. 2 (1987) 262; (TM-ARH-008064).
• T. Sands, C. C. Chang, V. G. Keramidas, K. M. Krishnan and J. Washburn, "The Ni-InP Reaction: Formation of Amorphous and Crystalline Ternary Phases," Appl. Phys. Lett. 50 (1987) 1346.
• T. Sands, V. G. Keramidas, K-M. Yu, J. Washburn and K. M. Krishnan, "A Comparative Study of Phase Stability and Film Morphology in Thin-Film M/GaAs Systems (M= Co, Rh, Ir, Ni, Pd and Pt)," J. Appl. Phys. 62 (1987) 2070.
• K. M. Yu, S. K. Cheung, T. Sands, J. M. Jaklevic and E. E. Haller, "Correlation between Solid State Reactions and Electrical Properties of the Rh/GaAs Schottky Contact," J. Appl. Phys. 61 (1987) 1099; (LBL-21889, TM-ARH-008009).
• Kin Man Yu, T. Sands, J. M. Jaklevic and E. E. Haller, "Interfacial Interactions of Evaporated Iridium Thin Films with (100) GaAs," J. Appl. Phys. 62 (1987) 1815.
• K. M. Yu, W. Walukiewicz, J. M. Jaklevic, E. E. Haller and T. Sands, "Effects of Interface Reactions on Electrical Characteristics of Metal-GaAs Contacts," Appl. Phys. Lett. 51 (1987) 189.
• Invited- T. Sands, "Compound Semiconductor Contact Metallurgy," Mater. Sci. Engin. B 1 (1988) 289; (TM-ARH-012196).
• T. Sands, E. D. Marshall and L. C. Wang, "Solid-Phase Regrowth of Compound Semiconductors by Reaction-Driven Decomposition of Intermediate Phases," J. Mater. Res. 3 (1988) 914; (TM-ARH-010795).
• R. Caron-Popowich, J. Washburn, T. Sands and A. S. Kaplan, "Phase Formation in the Pd-InP System," J. Appl. Phys. 64, 4909 (1988); (TM-ARH-012195).

Ion Implantation in Semiconductors (1984-87)

• D. K. Sadana, T. Sands and J. Washburn, "High Resolution Transmission Electron Microscopy Study of Se+-Implanted and Annealed GaAs: Mechanisms of Amorphization and Recrystallization," Appl. Phys. Lett. 44 (1984) 623; (LBL-17267).
• T. Sands, D. K. Sadana, R. Gronsky and J. Washburn, "High Resolution Structural Characterization of the Amorphous-Crystalline Interface in Se+- Implanted GaAs," Appl. Phys. Lett. 44 (1984) 874; (LBL-17035).
• T. Sands, J. Washburn, R. Gronsky, W. Maszara, D. K. Sadana and G. A. Rozgonyi, "Near-Surface Defects Formed during Rapid Thermal Annealing of Preamorphized and BF2+-Implanted Silicon," Appl. Phys. Lett. 45 (1984) 982; (LBL-18000).
• D. K. Sadana, J. M. Zavada, H. A. Jenkinson and T. Sands, "High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide," Appl. Phys. Lett. 47 (1985) 691.
• T. Sands, J. Washburn, E. Myers and D. K. Sadana, "On the Origins of Structural Defects in BF2+-Implanted and Rapid-Thermally-Annealed Silicon: Conditions for Defect-free Regrowth," Nucl. Instruments and Methods B7/8 (1985) 337.
• T. Banwell, M-A. Nicolet, T. Sands and P. J. Grunthaner, "Chemical Effects in Ion Mixing of a Ternary System (metal-SiO2)," Appl. Phys. Lett. 50 (1987) 571.

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