Pulsed laser deposition
of GaN
Overview
under construction
Incorporation efficiency of
Mg versus lattice constant as studied by pulsed-laser deposition
of Gallium Nitride.
Related Publications
Pulsed laser deposition of aluminum
nitride and gallium nitride thin films
G.S. Sudhir, H. Fujii, W.S. Wong, C. Kisielowski, N. Newman,
C. Dieker, Z. Liliental-Weber, M.D. Rubin, E.R. Weber
Appl. Surf. Sci. 127-129, 471 (1998).
ONLINE
Effect of Mg, Zn, Si and O on the
lattice constant of gallium nitride thin films
G.S. Sudhir, Y. Peyrot, J. Krüger, Y. Kim, R. Klockenbrink,
C. Kisielowski, M.D. Rubin, and E.R. Weber
Mat. Res. Soc. Symp. Vol. 482, 525 (1998).
DOWNLOAD (65K)
Pulsed excimer laser processing
of AlN/GaN thin films
W.S. Wong, L.F. Schloss, Sudihr G.S., B.P. Linder K.-M. Yu,
E.R. Weber, T. Sands, N.W. Cheung
Mat. Res. Soc. Vol. , 1011 (1997).
Control of the structure and surface
morphology of gallium nitride and aluminum nitride thin films
by nitrogen background pressure in pulsed laser deposition
G. S. Sudhir, H. Fujii, W. S. Wong, C. Kisielowski, N. Newman,
C. Dieker, Z. Liliental-Weber, M. D. Rubin and E. R. Weber
J. Electron. Mat. 27, 215 (1997).
