GaN HEMT
Reliability and Radiation Effects
Overview
under
construction
Related
Publications
Compression
of the DC drain current by electron trapping
in AlGaN/GaN modulation-doped field-effect
transistors
S. Nozaki, H. Feick, E.R. Weber, M. Micovic,
C. Nguyen
Appl. Phys. Lett. 78, 2896 (2001).
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