|
Webergroup publications
- GaAs and related materials
(1996 - present)
2004
The influence of structural properties on conductivity and luminescence of MBE grown InN,
P. Specht, R. Armitage, J. Ho, E. Gunawan, Q. Yang, X. Xu, C. Kisielowski, E.R. Weber
J.
of Cryst. Growth 269, 111 (2004)
2003
Impact
of beryllium dopants on the stability of LT-grown AlAs/GaAs:Be
heterostructures against thermally activated intermixing
K. Tillmann, M. Luysberg, P. Specht, E.R. Weber
Thin Solid Films 437, 74 (2003)
Importance
of carrier dynamics and conservation of momentum in atom-selective
STM imaging and band gap determination of GaAs(110)
N. D. Jäger, E. R. Weber, K. Urban, and Ph. Ebert
Phys. Rev. B 67, 165327 (2003). online
Nanoscale
dopant-induced dots and potential fluctuations in GaAs
N. D. Jäger, K. Urban, E. R. Weber, and Ph. Ebert
Appl. Phys. Lett. 82, 2700 (2003). online
Physics
of imaging p-n junctions by scanning tunneling microscopy
and spectroscopy
N. D. Jäger, M. Marso, M. Salmeron, E. R. Weber, K. Urban,
Ph. Ebert
Phys. Rev. B. 67, 165307 (2003). online
Determination
of the charge carrier compensation mechanism in Te-doped GaAs
by scanning tunneling microscopy
J. Gebauer, E. R. Weber, N. D. Jäger, K. Urban, Ph. Ebert
Appl. Phys. Lett. 82, 2059 (2003). online
Generation-recombination
low-frequency noise signatures in GaAs metal–semiconductor
field-effect transistors on laterally oxidized AlAs
S.
Y. Tzeng, M. J. Cich, R. Zhao, H. Feick, and E. R. Weber
Appl. Phys. Lett. 82, 1063 (2003). online
2002
Direct
compositional analysis of AlGaAs/GaAs heterostructures by
the reciprocal space segmentation of high-resolution micrographs
K. Tillmann, M. Luysberg, P. Specht, and E. R. Weber
Ultramicroscopy
93, 123 (2002)
Ab
initio prediction of the structure of glide set dislocation
cores in GaAs
S.P. Beckmann, X. Xu, P. Specht, E.R. Weber, C. Kisielowski,
D.C. Chrzan
J.
of Phys. C14, 12673 (2002)
Direct electron
beam processing of semiconductor nanostructures
Y. Park, R. Zhao, P. Specht, E.R. Weber
MRS
Symp. Proc. 727, 161 (2002)
Nitrogen
Incorporation in GaAsN Grown at Low Temperature by Molecular
Beam Epitaxy,
R. Zhao, J. Gebauer, P. Specht, H. Feick, E.R. Weber
Proc.
of the 4th Symposium on Non-Stoichiometric III-V Compounds,
Asilomar, USA, Oct. 2002, edited S. Malzer, T. Marek, P. Kiesel,
Physik Mikrostrukturierter Halbleiter vol. 27, University
Erlangen (2002), p. 25.
A
Standard Low Temperature GaAs Growth - Prerequisite for Defect
Engineering
P.
Specht, R. Zhao, J. Gebauer, E.R. Weber
Proc. of the 4th Symposium on Non-Stoichiometric III-V Compounds,
Asilomar, USA, Oct. 2002, edited S. Malzer, T. Marek, P. Kiesel,
Physik Mikrostrukturierter Halbleiter vol. 27, University
Erlangen (2002), 31.
Influence
of Carbon Doping on the Optical and Electrical Properties
of MBE-GaN Grown on MOVPE-GaN/Sapphire Templates
R. Armitage, Q. Yang, H. Feick, S.Y. Tzeng, J. Gebauer,
E.R. Weber,
Proc. of the 4th Symposium on Non-Stoichiometric III-V Compounds,
Asilomar, USA, Oct. 2002, edited S. Malzer, T. Marek, P. Kiesel,
Physik Mikrostrukturierter Halbleiter vol. 27, University
Erlangen (2002), 119.
Direct
compositional analysis of AlGaAs/GaAs heterostructures by
the reciprocal space segmentation of high-resolution micrographs,
K. Tillmann, M. Luysberg, P. Specht, and E. R. Weber
Ultramicroscopy 93, 123 (2002). online
Mechanisms
of interdiffusion and thermal stability upon annealing of
AlAs/GaAs:Be quantum wells grown under low temperature conditions
K. Tillmann, M. Luysberg, A. Fattah, P. Specht, and E. R.
Weber
Proceedings of the Royal Microscopical Society. Microscopy
of Semiconducting Materials XII, edited by A. G. H. Cullis,
J.L. (IOP Publishing, Bristol, UK, Oxford, UK, 2001), p. 101.
Dopant
atom clustering and charge screening induced roughness of
electronic interfaces in GaAs p-n multilayers
N. D. Jäger, K. Urban, E. R. Weber, and Ph. Ebert
Phys. Rev. B. 65, 235302 (2002). online
Scanning
tunneling microscopy and spectroscopy of semi-insulating GaAs
N. D. Jäger, Ph. Ebert, K. Urban, R. Krause-Rehberg,
and E. R. Weber
Phys. Rev.
B 65, 195318 (2002). online
In
situ diffuse reflectance spectroscopy investigation of low-temperature-grown
GaAs
Ri-an Zhao, Michael J. Cich, Petra Specht, and Eicke R.
Weber
Appl. Phys. Lett. 80, 2060 (2002). online
Influence of gas transport on the oxidation rate of
aluminum arsenide
Cich, M.J.: Zhao, R.; Anderson, E.H.; Weber, E.R.
J. Appl. Phys. 91, 121 (2002). online
2001
Does Beryllium
doping suppress the formation of Ga-vacancies in nonstoichiometric
GaAs layers grown at low temperatures?
J. Gebauer, R. Zhao, P.Specht, E.R.Weber, F. Redmann,
F. Börner, R. Krause-Rehberg, Appl. Phys. Lett. 79, 4313 (2001).
online
“MBE growth
of (In)GaAsN on GaAs using a constricted DC plasma source”
A.E. Zhukov, R. Zhao, P. Specht, V.M. Ustinov, A. Anders,
E.R. Weber, Semicond. Sci. Technol. 16, 413 (2001)
online
GaAsN-on-GaAs
MBE Using a DC Plasma Source
A. E. Zhukov, E. S. Semenova, V. M. Ustinov, E. R. Weber,
Technical Physics 46 (2001) 1265-1269 (Zhurnal Tekhnicheskoy
Fiziki 71 (2001) 59-64)
online
Pressure
dependence of Cu, Ag, and Fe/n-GaAs Schottky barrier heights
Gworek, C.S.; Phatak, P.; Jonker, B.T.; Weber, E.R.; Newman,
N., Phys. Rev. B 64, 045322 (2001)
online
MESFETS
fabricated on Be-doped low temperature grown GaAs buffer layers
T.R.
Weatherford, P. Specht, A.A. Parker, E.R. Weber, Proc. 3rd
Symposium on Non-Stoichiometric III-V Compounds, Erlangen,
Germany,eds: S. Malzer, T. Marek, P. Kiesel, in Physik Mikrostrukturierter
Halbleiter 23, p.13 (2001)
Low
temperature MBE grown GaAs gettering of AlAs oxidation induced
defects
M.J. Cich, R. Zhao,
S. Tzeng, P. Specht, E.R. Weber, Proc. 3rd Symposium on Non-Stoichiometric
III-V Compounds, Erlangen, Germany,eds: S. Malzer, T. Marek,
P. Kiesel, in Physik Mikrostrukturierter Halbleiter 23, p.43
(2001)
Conductive
Non-Stoichiometric III-V Compounds: Properties and Prospective
Applications
P. Specht, M.J. Cich, R. Zhao, J. Gebauer, E.R. Weber,
Proc. 3rd Symposium on Non-Stoichiometric III-V Compounds,
Erlangen, Germany,eds: S. Malzer, T. Marek, P. Kiesel, in
Physik Mikrostrukturierter Halbleiter 23, p.73 (2001)
Beryllium
dopant induced stabilization against intermixing and precipitation
upon annealing of LT-AlAs/GaAs:BE multiplpe quantum wells
K.Tillmann, M. Luysberg, P. Specht, M.J. Cich, E.R. Weber,
Proc. 3rd Symposium on Non-Stoichiometric III-V Compounds,
Erlangen, Germany,eds: S. Malzer, T. Marek, P. Kiesel, in
Physik Mikrostrukturierter Halbleiter 23, p.79 (2001)
“Strain relaxation
and dislocation filtering in metamorphic high electron mobility
transistor structures grown on GaAs substrates”
D. Lubychev, W.K. Liu, T.R. Stewart, A.B. Cornfeld, X.M.
Fang, X. Xu, P. Specht, C. Kisielowski, M. Naidenkova, M.S.
Goorsky, C.S. Whelan, E. Hoke, P.F. Marsh, J. Mirecki Millunchick,
S.P. Svensson, J. Vac. Sci. & Techn. B19, 1510 (2001)
online
AFM study
of lattice matched and strained InGaAsN layers on GaAs
Yeonjoon Park, Michael J. Cich, Rian Zhao, Petra Specht,
Henning Feick, Eicke R. Weber, Physica B 308-310, 98 (2001).
online
Native point
defects in non-stoichiometric GaAs doped with beryllium
J. Gebauer, R. Zhao, P.Specht, F. Redmann, F. Börner,
R. Krause-Rehberg, E.R.Weber, Physica B 308-310, 812 (2001).
online
Incorporation
and thermal stability of defects in highly p-conductive non-stoichiometric
GaAs:Be
P. Specht, M.J. Cich, R. Zhao, J. Gebauer, M. Luysberg,
E.R. Weber, Physica B 308-310, 808 (2001). online
Interpretation
of GaAs(110) scanning tunneling microscopy image contrast
by the symmetry of the surface Bloch wave functions
N. D. Jäger, E. R. Weber, M. Salmeron, Journal of Vacuum
Science & Technology B19, 511 (2001)
online
Separation
of Electron and Hole Dynamics in Low-Temperature grown GaAs
M. Haiml, U. Siegner, F. Morier-Genoud, J. Gebauer, P.
Specht, E.R. Weber, U. Keller in: 2000 Int. Semiconducting
and Insulating Materials Conference, SIMC-XI, eds.: C. Jagadish
and N.J. Welham, IEEE Publ. (2001), p.97.
“Influence
of Be Doping on the Structural Properties of Low-Temperature
grown GaAs”,
M. Luysberg, P. Specht, E.R. Weber, in: 2000 Int. Semiconducting
and Insulating Materials Conference, SIMC-XI, eds.: C. Jagadish,
N.J. Welham, IEEE Publ. (2001), p.81.
Defect engeneering
in MBE grown GaAs based materials
P. Specht, M.J. Cich, R. Zhao, N.D. Jäger, J. Gebauer,
F. Börner, R. Krause-Rehberg, M. Luysberg, E.R. Weber, in:
Proceedings 2000 Int. Semiconducting and Insulating Materials
Conference, SIMC-XI, eds.: C. Jagadish and N.J. Welham, IEEE
Publ. (2001), p.73.
2000
Properties
of carbon-doped low-temperature GaAs and InP grown by solid-source
molecular-beam epitaxy using CBr4
W.K.
Liu, D.I. Lubyshev, P. Specht, R. Zhao, E.R. Weber, J. Gebauer,
A. J. SpringThorpe, R. W. Streater, S. Vijarnwannaluk, W.
Songprakob, R. Zallen
J.
Vacuum Science & Technology B18, 1594 (2000)
online
Analysis
of Twin Defects in GaAs(111)B MBE Growth
Y. Park, M.J. Cich, R. Zhao, P. Specht, E.R. Weber, E.
Stach, J. Vac. Sci. Technol. B18, 1566 (2000)
online
Defect identification
in GaAs grown at low temperatures by positron annihilation
J. Gebauer, F. Börner, R. Krause-Rehberg, T.E.M. Staab,
W. Bauer-Kugelmann, G. Koegel, W. Triftshaeuser, P. Specht,
R.C. Lutz, E.R. Weber, M. Luysberg
J. Appl. Phys. 87, 8368 (2000)
online
Influence
of short-range ordering on roughness of (AlGa)As interfaces
studied with cross-sectional scanning tunneling microscopy
T.C.G. Reusch , M. Wenderoth, A. J. Heinrich, K. J. Engel,
N. Quaas, K. Sauthoff, R. G. Ulbrich, E. R. Weber, K. Uchida,
W. Wegscheider
Appl. Phys. Lett.76, 3882 (2000).
1999
Short-range
ordering in AlxGa1 – xAs grown with metal-organic vapor-phase
epitaxy
A. J. Heinrich, M. Wenderoth, K. J. Engel, T. C. G. Reusch,
K. Sauthoff, and R. G. Ulbrich, E. R. Weber, K. Uchida
Phys. Rev. B 59, 10296 (1999) online
Low temperature
ultrahigh vacuum cross-sectional scanning tunneling microscope
for luminescence measurements
Yoonho Khang; Yeonjoon Park; Salmeron, M.; Weber, E.R.,
Review of Scientific Instruments, Dec. 1999, vol.70, (no.12):4595-9
online
Conductive
LT-GaAs: The alternative for device applications?,
P. Specht, M.J. Cich, H. Sohn, E.R. Weber, in: Physik
Mikrostrukturierter Halbleiter 10, eds.: P. Kiesel, S. Malzer,
T. Marek, Erlangen-Nuernberg, 1999, p. 7
Nonlinear
optical properties of low-temperature grown semiconductors
U. Siegner, M. Haiml, F. Morier-Genoud, R.C. Lutz, P.
Specht, E.R. Weber, U. Keller, in: Physik Mikrostrukturierter
Halbleiter 10, eds.: P. Kiesel, S. Malzer, T. Marek, Erlangen-Nuernberg,
1999, p. 33
Electrical
Characterization of Beryllium Doped Low Temperature MBE Grown
GaAs
M.J. Cich, R. Zhao, Y. Park, P. Specht, E.R. Weber, in:
Physik Mikrostrukturierter Halbleiter 10, eds.: P. Kiesel,
S. Malzer, T. Marek, Erlangen-Nuernberg, 1999, p. 85
Limitations
to epitaxial growth of low-temperature grown GaAs
M. Luysberg, P. Specht, E.R. Weber, in: Physik Mikrostrukturierter
Halbleiter 10, eds.: P. Kiesel, S. Malzer, T. Marek, Erlangen-Nuernberg,
1999, p. 97
Structural
and Photoluminescence of Er Implanted Be doped and undoped
LT-GaAs
R.L. Maltez, Z. Liliental-Weber, J. Washburn, M. Behar,
P.B. Klein, P. Specht, E.R. Weber, J. Appl. Phys. 85, 1105
(1999)
online
Femtosecond
response times and high optical nonlinearity in Beryllium
doped low-temperature grown GaAs
M. Haiml, U. Siegner, F. Morier-Genoud, U. Keller, M.
Luysberg, P. Specht, E.R. Weber, Appl. Phys. Lett. 74, 1269
(1999)
online
Optical
nonlinearity in low-temperature grown GaAs: microscopic limitations
and optimization strategies
M. Haiml, U. Siegner, F. Morier-Genoud, U. Keller, M.
Luysberg, R.C. Lutz, P. Specht, E.R. Weber, Appl. Phys. Lett.
74, 3134 (1999)
online
Properties of
C-doped LT-GaAs grown by MBE using CBr4
W.K. Liu, K. Bacher, E.R. Weber, P. Specht, F.J. Towner,
T.R. Stewart, J. of Cryst. Growth 201/202, 217 (1999)
online
Improvement
of MBE-grown LT-GaAs through p-doping with Be and C
P. Specht, R.C. Lutz, R. Zhao, E.R. Weber, W.K. Liu, K.
Bacher, F.J. Towner, T.R. Stewart, M. Luysberg, J. Vac. Sci.
Technol. B17, 1200 (1999)
online
Change of
electrical and structural properties of non-stoichiometric
GaAs through Be doping
M. Luysberg, P. Specht, K. Thul, Z. Liliental-Weber, E.R.
Weber, in: IEEE conference on semiconducting and insulating
materials SIMC-X, Berkeley CA, June 1998, eds. Z. Liliental-Weber
& C. Miner, (1999), p.87
Electrical
properties and thermal stability of Be-doped non-stoichiometric
GaAs
R.C. Lutz, P. Specht, R. Zhao, E.R. Weber, in: IEEE conference
on semiconducting and insulating materials SIMC-X, Berkeley
CA, June 1998, eds. Z. Liliental-Weber & C. Miner, (1999),
p.113
Vacancies
in low-temperature-grown GaAs: Observations by positron annihilation
J. Gebauer, F. Boerner, R. Krause-Rehberg, P. Specht,
E.R. Weber, in: IEEE conference on semiconducting and insulating
materials SIMC-X, Berkeley CA, June 1998, eds. Z. Liliental-Weber
& C. Miner, (1999), p.118
Structural
and photoluminescence analysis of Er implanted LT-GaAs
R.L. Maltez, Z. Liliental-Weber, J. Washburn, M. Behar,
P.B. Klein, P. Specht, E.R. Weber, in: IEEE conference on
semiconducting and insulating materials SIMC-X, Berkeley CA,
June 1998, eds. Z. Liliental-Weber & C. Miner, (1999),
p.122
Time-resolved
reflectivity measurement of thermally stabilized As-rich GaAs
R. Zhao, P. Specht, R. Lutz, E.R. Weber, S. Jeong, J.
Bokor, in: IEEE conference on semiconducting and insulating
materials SIMC-X, Berkeley CA, June 1998, eds. Z. Liliental-Weber
& C. Miner, (1999), p.130
Native point
defect analysis in non-stoichiometric GaAs: An annealing study
R.C. Lutz, P. Specht, O.H. Lam, R. Zhao, E.R. Weber, J.
Gebauer, R. Krause-Rehberg, Physica B 274, 722 (1999)
online
Femtosecond
nonlinear optics of low-temperature grown semiconductors
U. Siegner, M. Haiml, F. Morier-Genoud, U. Keller, M.
Luysberg, R.C. Lutz, P. Specht, E.R. Weber, Physica B 274,
733 (1999)
online
Electrical
Characterization of Beryllium Doped Low Temperature MBE Grown
GaAs
M.J. Cich, R.C. Lutz, R. Zhao, P. Specht, E.R. Weber,
MRS Symp. Proc. 570, 129 (1999)
1998
Growth and
Characterization of p-doped LT-GaAs
P. Specht, R.C. Lutz, R. Zhao, E.R. Weber, in: Physik
Mikrostrukturierter Halbleiter 6, eds.: T. Marek, S. Malzer,
P. Kiesel, Erlangen-Nuernberg 1998, p.15
Formation
of As precipitates in Be-doped non-stoichiometric GaAs and
their influence on the electrical properties
M. Luysberg, K. Thul, K. Urban, P. Specht, E.R. Weber,
Z. Liliental-Weber, in: Physik Mikrostrukturierter Halbleiter
6, eds.: T. Marek, S. Malzer, P. Kiesel, Erlangen-Nuernberg
1998, p.23 Defect engineering of low-temperature grown
gallium arsenid for applications in ultrafast optics,
M. Haiml, U. Siegner,
F. Morier-Genoud, U. Keller, M. Luysberg, P. Specht, E.R.
Weber, in: Physik Mikrostrukturierter Halbleiter 6, eds.:
T. Marek, S. Malzer, P. Kiesel, Erlangen-Nuernberg 1998, p.79
Effects
of the growth temperature and As/Ga flux ratio on the incorporation
of excess As into low-temperature grown GaAs
M. Luysberg, H. Sohn, A. Prasad, P. Specht, Z. Liliental-Weber,
E.R. Weber, J. Gebauer, R. Krause-Rehberg, J. Appl. Phys.
83, 561 (1998)
online
Transmission
electron microscopy and photoluminescence studies of Er implanted
LT-GaAs:Be
R.L. Maltez, Z. Liliental-Weber, J. Washburn, M. Behar, P.B.
Klein, P. Specht, E.R. Weber, Appl. Phys. Lett. 73, 2170,(
1998)
online
Thermal
stabilization of non-stoichiometric GaAs through beryllium
doping
R.C. Lutz, P. Specht, R. Zhao, S. Jeong, J. Bokor, E.R. Weber,
MRS Symp. Proc. 510, 55 (1998)
Structural
and photoluminescence studies of Er implanted LT-GaAs,
R.L. Maltez, Z. Liliental-Weber, J. Washburn, P. Specht,
E.R. Weber, M. Behar, P.B. Klein, MRS Symp. Proc. 510, 319
(1998)
Origin of
the magnetic circular dichroism of absorption of the arsenic
antisite in GaAs and AlxGa1-xAs
A. Prasad, P. Stallinga, X. Liu, and E. R. Weber, Phys.
Rev. B 57, R4214 (1998)
online
1997
Defect control
in As-rich GaAs
P. Specht, S. Jeong, H. Sohn, M. Luysberg, A. Prasad, J. Gebauer,
R. Krause-Rehberg, E.R. Weber, in: Proc. of the International
Conference of Defects in Semiconductors ICDS19, Aveiro, Portugal,
July 1997. Mater. Sci. Forum 258-263, 951 (1997)
DOWNLOAD (488K)
Vacancy defects
in low-temperature-grown GaAs observed by continuous and pulsed
slow positrons
J. Gebauer, R. Krause-Rehberg, S. Eichler, W. Bauer-Kugelmann,
G. Koegel, W. Trifftshaeuser, M. Luysberg, H. Sohn, E.R. Weber,
Proc. of the Int. Conf. on Defects in Semiconductors ICDS19,
July 1997, Aveiro, Portugal, Mater. Sci. Forum 255-257,204
(1997)
Electrical and
structural properties of LT-GaAs: Influence of As/Ga flux
ratio and growth temperature
M. Luysberg, H. Sohn, A. Prasad, P. Specht, H. Fujioka,
R. Klockenbrink, E.R. Weber, Mat. Res. Soc. Symp. Proc. 442,
485 (1997)
Ga vacancies in
low-temperature-grown GaAs identified by slow positrons
J. Gebauer, R. Krause-Rehberg, S. Eichler, M. Luysberg,
H. Sohn, E.R. Weber, Appl. Phys. Lett. 71, 638 (1997)
online
Effects of GaAs
thickness on ordering and size of vertically coupled InAs
dots embedded in GaAs layers
S. Ruvimov, Z. Liliental-Weber, J. Washburn, E. R. Weber,
A. Sasaki, A. Wakahara, T. Abe and S. Noda, Proc. Spring `97
MRS Meeting, San Francisco (1997).
1996
The influence
of native point defects on the performance of diodes built
on semi-insulating GaAs
J. Kruger et al., Proc. IEEE SIMC-9, Proc. Semi-Insulating
and Semiconducting Materials Conference, Toulouse, 1996.
DOWNLOAD (98K)
Scanning tunneling
microscopy of the GaAs(100) surface at low bias
N. D. Jäger, X. Liu, J. F. Zheng, N. Newman, D. F. Ogletree,
E. R. Weber, and M. Salmeron, Scanning tunneling microscopy
of the GaAs (110) surface at low bias, in 23rd International
Conference on the Physics of Semiconductors; Vol. 2, edited
by M. Scheffler and R. Zimmermann (World Scientific, Berlin,
Germany, 1996), p. 847-50
Electrical characterization
of low-temperature Al0.3Ga0.7As
using n-i-n structures
A.K. Verma, J. Tu, J.S. Smith, H. Fujioka, E.R. Weber,
Appl. Phys. Lett. 68, 699 (1996)
online
Control of stoichiometry
dependent defects in low temperature GaAs
M. Luysberg, H. Sohn, A. Prasad, H. Fujioka, R. Klockenbrink,
E.R. Weber, in: Semiconducting and Insulating Materials 1996,
Ed.: C. Fontaine, IEEE (1996), p.21
Quantitative HRTEM:
a step towards application oriented basic research
C. Kisielowski, Z. Liliental-Weber and E.R. Weber, Brazilian
Journal of Physics 26, 83 (1996)
High resistivity
and ultrafast carrier lifetime in argon implanted GaAs
W. Walukiewicz, Z. Liliental-Weber, J. Jasinski, M. Almonte,
E.E. Haller, A. Prasad, E.R. Weber, K. Wang, J. Whitaker,
Appl. Phys. Lett. 69, 2569 (1996)
online
Pdf-files can be viewed with the free
Acrobat Reader
| Please e-mail Joerg
updates |
Last revised: 04/23/03
|
|
