Our research is
focused on semiconductor materials. The properties of a semiconductor
are to a large degree determined by defects such as intrinsic
point defects, dislocations or unintended impurities. Therefore,
our work involves to a large degree defects. Our final goal
is understanding of such defects in a way that we can use
ore avoid them to engineer the desired properties of a material. We are mainly
focused
on three groups of materials:
Si,
GaAs, and
wide-bandgap semiconductors such as GaN. Our work ranges from MBE growth (especially of
III-V compounds) and characterization to the processing of
device structures to test our materials.
For characterization
we employ a wide range of
techniques. Routinely, optical
methods (absorption spectroscopy, reflection, photoluminescence, MCD), electrical characterization (IV, CV, DLTS, ECV), magnetic
resonance techniques (EPR, photo EPR. ODMR), and microscopy
(TEM, STM), are used.
Our location at
UC Berkeley as part of the Materials
Science and Engineering Department and at the
Lawrence Berkeley
National Laboratory enables us direct
access to many of their facilities, such as the
Micro Fabrication
Lab, the
Integrated Materials
Lab, the
National Center for
Electron Microscopy, and the
Advanced Light Source.
Contact
Prof. Eicke R. Weber
Materials Science & Engineering
374 Hearst Memorial Mining Building
University of California at Berkeley
Berkeley CA 94720
Tel.: 510 - 642 - 0205
FAX: 510 - 642 - 2069
e-mail:
weber@berkeley.edu
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e-mail Peng
Zhang for suggestions
