Recent peer-reviewed publications and invited reviews:
5. J. W. L. Yim and J. Wu, Optical Properties of InN and Related Alloys; Book Chapter, Indium Nitride and Related Alloys, Edited by T. D. Veal, C. F. McConville and W. J. Schaff, Taylor & Francis (2008).
4. D. R. Khanal and J. Wu, Gate Coupling and Charge Distribution in Nanowire Field Effect Transistors; Nano Lett.; 7, 2778 (2007). (PDF)
3. J. W. L. Yim, R. E. Jones, K. M. Yu, J. W. Ager III, W. Walukiewicz, W. J. Schaff and J. Wu, Effects of Surface States on Electrical Characteristics of InN and InGaN; Phys. Rev. B, Rapid Commun.; 76, 041303(R) (2007). (PDF)
2. D. R. Khanal, Joanne W. L. Yim, W. Walukiewicz and J. Wu, Effects of Quantum Confinement on the Doping Limit of Semiconductor Nanowires; Nano Lett.; 7, 1186 (2007). (PDF)
1. K. Alberi, J. Wu, W. Walukiewicz, K. M. Yu. O. D. Dubon, S. P. Watkins, C. X. Wang, X. Liu, Y. J. Cho and J. Furdyna; Valence-Band Anticrossing in Mismatched III-V Semiconductor Alloys; Phys. Rev. B; 75, 045203 (2007). (PDF)
Conference proceedings and posters:
4. J. W. L. Yim, B. Xiang and J. Wu, In situ TEM Investigations of Vapor-Liquid-Solid Phase Transition in GeTe Nanowires; MRS Spring Meeting, March 24-28, 2008, San Francisco, CA.
3. D. R. Khanal, D. F. Ogletree, Y. Cui, W. Walukiewicz, E. Calleja and J. Wu, High Spatial Resolution Cathodoluminescence Studies of InGaN Nano- and Microcolumns; MRS Spring Meeting, March 24-28, 2008, San Francisco, CA.
2. J. W. Yim, R. E. Jones, K. M. Yu, J. W. Ager III, W. Walukiewicz and J. Wu, Surface States of InN and InGaN; 7th International Conference of Nitride Semiconductors, September 16-21, 2007, Las Vegas, NV, USA.
1. D. R. Khanal and J. Wu, Numerical Studies of Semiconductor Nanowire Electrostatics; SPIE Optics East, September 9-12, 2007, Boston, MA, USA.
Patents:
W. Walukiewicz, K. M. Yu, J. Wu and W. J. Schaff, Broad Spectrum Solar Cells, US patent 7217882.
W. Walukiewicz, K. M. Yu and J. Wu, Multiband Semiconductors for High-Efficiency Solar Cells, US patent pending (2003).
Selected previous publications:
J. Wu, Q. Gu, B. S. Guiton, L. Ouyang, N. de Leon, H. Park;
Strain-induced Self Organization of Metal-Insulator Domains in
Single-Crystalline VO2 nanobeams; Nano Lett.; 6, 2313 (2006).
Q. Gu, A. Falk, J. Wu, L. Ouyang and H. Park; Current-Driven Phase
Oscillation and Domain-Wall Propagation in WxV1-xO2 Nanobeams; Nano Lett.; 7, 363 (2007).
D. Yu, J. Wu, Q. Gu and H. Park; Germanium Telluride Nanowires and
Nanohelices with Memory Switching Behavior; J. Am. Chem. Soc.; 128, 8148(2006).
J. Wu, W. Walukiewicz, W. Shan, et. al.; Structure-Dependent
Hydrostatic Deformation Potentials of Individual Single-Walled Carbon
Nanotubes; Phys. Rev. Lett.; 93, 017404 (2004).
J. Wu, W. Q. Han, W. Walukiewicz, et. al.; Raman Spectroscopy and
Time-resolved Photoluminescence of BN and BCN Nanotubes; Nano Lett.;
4, 647 (2004).
K. M. Yu, W. Walukiewicz, J. Wu, et. al.; Diluted II-VI Oxide
Semiconductors with Multiple Band Gaps; Phys. Rev. Lett., 91, 246403
(2003). Led to a Multiband Solar Cell patent.
J. Wu, W. Walukiewicz, K. M. Yu, et. al.; Superior Radiation
Resistance of In1-xGaxN Alloys: a Full-Solar-Spectrum Photovoltaic
Materials System; J. Appl. Phys., 94, 6477 (2003). Led to a Broad
Band Solar Cell patent.
J. Wu, W. Walukiewicz, K. M. Yu, et. al.; Effects of the Narrow
Bandgap on the Properties of InN; Phys. Rev. B, Rapid Commun., 66,
201403 (2002).
K. M. Yu, W. Walukiewicz, J. Wu, et. al.; Mutual Passivation of
Electrically Active and Isoelectronic Impurities: Si doped GaNxAs1-x;
Nature Mater., 1(3), 185 (2002).
J. Wu, W. Walukiewicz, H. Lu, W. Schaff, et. al.; Unusual Properties of the
Fundamental Bandgap of InN; Appl. Phys. Lett., 80, 3967 (2002).
Received 400+ citations as of 10/2007.
J. Wu, W. Walukiewicz, H. Lu, W. Schaff, et. al.; Small Bandgap Bowing in InxGa1-xN Alloys; Appl. Phys. Lett., 90, 4741 (2002).
J. Wu and W. Walukiewicz; Band Gaps of InN and group III Nitride
Alloys; invited review, Superlatt. and Microstruct.; 34, 63(2003).
J. Wu, W. Shan and W. Walukiewicz; Band Anticrossing Effects in
Highly Mismatched Semiconductor Alloys; invited review, Semicond.
Sci. Tech., 17, 860 (2002).
W. Walukiewicz, W. Shan, J. Wu and K. M. Yu; Band Anticrossing in
III-N-V Alloys: Theory and Experiments; book chapter, Physics and
Applications of Dilute Nitrides, edited by I. A. Buyanova and W. M.
Chen, Taylor & Francis, New York, (2003).
